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零件編號(hào)下載&訂購(gòu)功能描述制造商&上傳企業(yè)LOGO

GC1310

ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES

DESCRIPTION OurEPSMpackageddevicesaredesignedforthemostdemandingcommercialandMilitaryrequirementswheretheinconsistentperformanceinherentinplasticsurfacemountpackagescannotbetolerated.Thesepackagestylesextendthesurfacemountconstructionformatto6GHzforhighper

MicrosemiMicrosemi Corporation

美高森美美高森美公司

GC1310

ENHANCED PERFORMANCE SURFACE MOUNT EPSM??yperabrupt Varactor Diodes TM

MicrosemiMicrosemi Corporation

美高森美美高森美公司

GC1311-154-4

包裝:散裝 封裝/外殼:模具 類別:分立半導(dǎo)體產(chǎn)品 二極管 - 可變電容(變?nèi)萜?,可變電抗器?描述:SI TVAR NON HERMETIC EPSM SMT

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

GRF131

SURFACEMOUNTHIGHREPEATABILITYSPDT,BROADBAND18GHZ,40GBPSNON-LATCHINGRFRELAY

DESCRIPTION TheultraminiatureSeriesGRF131isdesignedtoprovide apracticalsurface-mountswitching solutionwithRFperformanceandrepeatabilityto 18GHz.TheGRF131improvesonTeledyneRelays’ heritageofminiatureRFrelaysbyincorporatingaprecision transmissionlinestructurein

TELEDYNE

Teledyne Technologies Incorporated

HCX-D131

For76.8V24SLiFePO4BatteryPacks

BESTECHBesTech Power Co., Ltd

百思特百思特電源有限公司

HVC131

SiliconEpitaxialPlanarPinDiodeforHighFrequencySwitching

Features ?Lowcapacitance.(C=0.8pFmax) ?Lowforwardresistance.(rf=1.0?max) ?UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

HitachiHitachi Semiconductor

日立日立公司

HVC131

SiliconEpitaxialPlanarPinDiodeforAntennaSwitching

Features ?Lowcapacitance.(C=0.8pFmax) ?Lowforwardresistance.(rf=1.0?max) ?UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HVC131

SiliconEpitaxialPlanarPinDiode

Features Lowcapacitance.(C=0.8pFmax) Lowforwardresistance.(rf=1.0max)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

HVD131

SiliconEpitaxialPlanarPinDiodeforHighFrequencySwitching

Features ?Lowcapacitance.(C=0.8pFmax) ?Lowforwardresistance.(rf=1.0?max) ?SupersmallFlatPackage(SFP)issuitableforsurfacemountdesign.

HitachiHitachi Semiconductor

日立日立公司

HVD131

SiliconEpitaxialPlanarPinDiodeforAntennaSwitching

Features ?Lowcapacitance.(C=0.8pFmax) ?Lowforwardresistance.(rf=1.0?max) ?SupersmallFlatPackage(SFP)issuitableforsurfacemountdesign.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HVU131

SiliconEpitaxialPlanarPinDiodeforHighFrequencySwitching

Features ?Lowcapacitance.(C=0.8pFmax) ?Lowforwardresistance.(rf=1.0?max) ?UltrasmallResinPackage(URP)issuitableforsurfacemountdesign.

HitachiHitachi Semiconductor

日立日立公司

HVU131

SiliconEpitaxialPlanarPinDiodeforAntennaSwitching

Features ?Lowcapacitance.(C=0.8pFmax) ?Lowforwardresistance.(rf=1.0?max) ?UltrasmallResinPackage(URP)issuitableforsurfacemountdesign.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HVU131

SiliconEpitaxialPlanarPinDiode

Features ●Lowcapacitance.(C=0.8pFmax) ●Lowforwardresistance.(rf=1.0Ωmax)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

HVU131

LowCapacitanceLowForwardresistance

Features ●Lowcapacitance.(C=0.8pFmax) ●Lowforwardresistance.(rf=1.0Ωmax)

SKTECHNOLGYSHIKE Electronics

時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司

IGCS-E131GP

Industrial4-portPCIeunmanagedGigabitEthernetswitchcard

ORING

ORing Industrial Networking Corp

IGPCS-E131GP

Industrial4-portPCIeunmanagedGigabitPoEEthernetswitchcard

ORING

ORing Industrial Networking Corp

INA131

PrecisionG=100INSTRUMENTATIONAMPLIFIER

BURR-BROWN

Burr-Brown (TI)

INA131

PrecisionG=100INSTRUMENTATIONAMPLIFIER

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

INA131AP

PrecisionG=100INSTRUMENTATIONAMPLIFIER

BURR-BROWN

Burr-Brown (TI)

INA131AP

PrecisionG=100INSTRUMENTATIONAMPLIFIER

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

詳細(xì)參數(shù)

  • 型號(hào):

    GC131

  • 制造商:

    MICROSEMI

  • 制造商全稱:

    Microsemi Corporation

  • 功能描述:

    ENHANCED PERFORMANCE SURFACE MOUNT EPSM?Hyperabrupt Varactor Diodes TM

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microchipdirect
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WINCHEN
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更多GC131供應(yīng)商 更新時(shí)間2024-10-22 14:36:00