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FXL6408UMX

Fully Configurable 8-Bit I2C-Controlled GPIO Expander

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FXL6408UMX

包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 封裝/外殼:16-UFQFN 類別:集成電路(IC) I/O 擴(kuò)展器 描述:IC GPIO EXPANDER I2C 8B 16-UMLP

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

HD-6408

CMOSAsynchronousSerialManchesterAdapter(ASMA)

TheHD-6408isaCMOS/LSIManchesterEncoder/Decoderforcreatingaveryhighspeedasynchronousserialdatabus.TheEncoderconvertsserialNRZdata(typicallyfromashiftregister)toManchesterIIencodeddata,addingasyncpulseandparitybit.TheDecoderrecognizesthissyncpulseandide

Intersil

Intersil Corporation

HD-6408

CMOSAsynchronousSerialManchesterAdapter(ASMA)

Intersil

Intersil Corporation

HD-6408

CMOSAsynchronousSerialManchesterAdapter(ASMA)

TheHD-6408isaCMOS/LSIManchesterEncoder/Decoderforcreatingaveryhighspeedasynchronousserialdatabus.TheEncoderconvertsserialNRZdata(typicallyfromashiftregister)toManchesterIIencodeddata,addingasyncpulseandparitybit.TheDecoderrecognizesthissyncpulseandide

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HD-6408

CMOSAsynchronousSerialManchesterAdapter

TheHD-6408isaCMOS/LSIManchesterEncoder/Decoder forcreatingaveryhighspeedasynchronousserialdatabus. TheEncoderconvertsserialNRZdata(typicallyfromashift register)toManchesterIIencodeddata,addingasyncpulse andparitybit.TheDecoderrecognizesthissyncpulseand

Intersil

Intersil Corporation

HM6408

N-ChannelEnhancementModePowerMOSFET

Description TheHM6408usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.Thisdeviceissuitableforuseasabatteryprotectionorinotherswitchingapplication. Features ●VDS=20V,ID=5.5A RDS(ON)

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HX6408

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408-EFM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408-EFN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408-EHM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408-EHN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408-ENM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408-ENN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408-ERM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408-ERN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408KEFM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408KEFN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408KEHM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

HX6408KEHN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國(guó)際

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    FXL6408UMX

  • 制造商:

    onsemi

  • 類別:

    集成電路(IC) > I/O 擴(kuò)展器

  • 包裝:

    卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶

  • I/O 數(shù):

    8

  • 接口:

    I2C

  • 中斷輸出:

  • 特性:

    POR

  • 輸出類型:

    開(kāi)路漏極

  • 電流 - 灌/拉輸出:

    6mA

  • 電壓 - 供電:

    1.65V ~ 4V

  • 工作溫度:

    -40°C ~ 85°C

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    16-UFQFN

  • 供應(yīng)商器件封裝:

    16-UMLP(1.8x2.6)

  • 描述:

    IC GPIO EXPANDER I2C 8B 16-UMLP

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
onsemi
24+
16-UFQFN
25000
in stock接口IC-原裝正品
詢價(jià)
FSC
15+
原廠原裝
5000
進(jìn)口原裝現(xiàn)貨假一賠十
詢價(jià)
ON/安森美
22+
UMLP-16
35000
原裝正品
詢價(jià)
ON
20000
原裝現(xiàn)貨,可追溯原廠渠道
詢價(jià)
ON(安森美)
23+
N/A
589610
新到現(xiàn)貨 原廠一手貨源 價(jià)格秒殺代理!
詢價(jià)
ON(安森美)
2023+
QFN-16
4550
全新原裝正品
詢價(jià)
ON/安森美
23+
UQFN-16
39048
原廠可訂貨,技術(shù)支持,直接渠道。可簽保供合同
詢價(jià)
ON/安森美
23+
UQFN-16
43316
正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊
詢價(jià)
ON(安森美)
23+
QFN-16
12234
公司只做原裝正品,假一賠十
詢價(jià)
ON
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
詢價(jià)
更多FXL6408UMX供應(yīng)商 更新時(shí)間2024-10-26 14:14:00