FSYE430R中文資料Intersil數(shù)據(jù)手冊PDF規(guī)格書

The Discrete Products Operation of Intersil has developed a

series of Radiation Hardened MOSFETs specifically

designed for commercial and military space applications.

Enhanced Power MOSFET immunity to Single Event Effects

(SEE), Single Event Gate Rupture (SEGR) in particular, is

combined with 100K RADS of total dose hardness to provide

devices which are ideally suited to harsh space

environments. The dose rate and neutron tolerance

necessary for military applications have not been sacrificed.

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

This MOSFET is an enhancement-mode silicon-gate power

field-effect transistor of the vertical DMOS (VDMOS)

structure. It is specially designed and processed to be

radiation tolerant. The MOSFET is well suited for

applications exposed to radiation environments such as

switching regulation, switching converters, motor drives,

relay drivers and drivers for high-power bipolar switching

transistors requiring high speed and low gate drive power.

This type can be operated directly from integrated circuits.

Reliability screening is available as either commercial, TXV

equivalent of MIL-S-19500, or Space equivalent of

MIL-S-19500. Contact Intersil for any desired deviations

from the data sheet.

Features

? 3A, 500V, rDS(ON) = 2.70?

? Total Dose

- Meets Pre-RAD Specifications to 100K RAD (Si)

? Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm2 with

VDS up to 80 of Rated Breakdown and

VGS of 10V Off-Bias

? Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80 BVDSS

- Typically Survives 2E12 if Current Limited to IDM

? Photo Current

- 8nA Per-RAD(Si)/s Typically

? Neutron

- Maintain Pre-RAD Specifications

for 3E12 Neutrons/cm2

- Usable to 3E13 Neutrons/cm2