首頁(yè) >FSYE23A0R>規(guī)格書(shū)列表

零件編號(hào)下載&訂購(gòu)功能描述制造商&上傳企業(yè)LOGO

FSYE23A0R

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

Intersil

Intersil Corporation

FSYE23A0R1

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

Intersil

Intersil Corporation

FSYE23A0R3

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

Intersil

Intersil Corporation

FSYE23A0R4

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

Intersil

Intersil Corporation

FSL23A0D

6A,200V,0.350Ohm,RadiationHardened,SEGRResistant,N-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin

Intersil

Intersil Corporation

FSL23A0R

6A,200V,0.350Ohm,RadiationHardened,SEGRResistant,N-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombin

Intersil

Intersil Corporation

FSS23A0D

9A,200V,0.330Ohm,RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

Intersil

Intersil Corporation

FSS23A0R

9A,200V,0.330Ohm,RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

Intersil

Intersil Corporation

FSYE23A0D

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

Intersil

Intersil Corporation

詳細(xì)參數(shù)

  • 型號(hào):

    FSYE23A0R

  • 制造商:

    INTERSIL

  • 制造商全稱(chēng):

    Intersil Corporation

  • 功能描述:

    Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格