Electrical Features

?Blocking voltage 750V

?Low VCEsat

?Low Switching Losses

?Low Qg and Crss

?Low Inductive Design

?Tvj op = 150°C

?Short-time extended Operation Temperature

Tvj op = 175°C

Mechanical Features

?4.2kV DC 1sec Insulation

?High Creepage and Clearance Distances

?Compact design

?High Power Density

?Direct Cooled PinFin Base Plate

?Guiding elements for PCB and cooler assembly

?Integrated NTC temperature sensor

?PressFIT Contact Technology

?RoHS compliant

?UL 94 V0 module frame

Description

The HybridPACKTM Drive is a very compact

six-pack module (750V/950A) optimized for hybrid

and electric vehicles. The power module

implements the new EDT2 IGBT generation, which

is an automotive Micro-Pattern Trench-Field-Stop

cell design optimized for electric drive train

applications. The chipset has benchmark current

density combined with short circuit ruggedness and

increased blocking voltage for reliable inverter

operation under harsh environmental conditions.

The EDT2 IGBTs also show excellent light load

power losses, which helps to improve system

efficiency over a real driving cycle. The EDT2 IGBT

was optimized for applications with switching

frequencies in the range of 10 kHz.

The new HybridPACKTM Drive power module family

comes with mechanical guiding elements

supporting easy assembly processes for customers.

Furthermore, the press-fit pins for the signal

terminals avoid additional time consuming selective

solder processes, which provides cost savings on

system level and increases system reliability. The

direct cooled baseplate with PinFin structure and

optimized ceramic material in the

FS950R08A6P2B product best utilizes the

implemented chipset and shows superior thermal

characteristics. Due to the high clearance &

creepage distances, the module family is also well

suited for increased system working voltages and

supports modular inverter approaches.

FS950R08A6P2B屬于分立半導(dǎo)體產(chǎn)品 > 晶體管 - IGBT - 模塊。英飛凌科技股份公司制造生產(chǎn)的FS950R08A6P2B晶體管 - IGBT - 模塊絕緣柵雙極晶體管 (IGBT) 是三端功率半導(dǎo)體器件，主要用作電子開(kāi)關(guān)，兼具高效率和快速切換優(yōu)點(diǎn)。作為模塊，IGBT 配置為非對(duì)稱式橋； 升壓、降壓和制動(dòng)斬波器；全橋、三電平和三相逆變器。有些器件內(nèi)置了用于監(jiān)控溫度的 NTC 熱敏電阻。IGBT 模塊可根據(jù)最大功率、集電極電流、集射擊穿電壓和配置進(jìn)行區(qū)分。