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FR160XCT

GLASS PASSIVATED FAST RECOVERY RECTIFIER

HORNBYNantong Hornby Electronic Co.,Ltd

南通康比電子南通康比電子有限公司

FRE160D

41A,100V,0.050Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessr

Intersil

Intersil Corporation

FRE160H

41A,100V,0.050Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessr

Intersil

Intersil Corporation

FRE160R

41A,100V,0.050Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessr

Intersil

Intersil Corporation

FRK160

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FRK160D

50A,100V,0.040Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessr

Intersil

Intersil Corporation

FRK160H

50A,100V,0.040Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessr

Intersil

Intersil Corporation

FRK160R

50A,100V,0.040Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessr

Intersil

Intersil Corporation

FSE-160-K

Space-savingPlug-inSignalConditionersF-UNIT

MSYSTEMM-System Co.,Ltd.

愛模愛模系統(tǒng)有限公司

FSE-160-K/Q

Space-savingPlug-inSignalConditionersF-UNIT

MSYSTEMM-System Co.,Ltd.

愛模愛模系統(tǒng)有限公司

FSE-160-L

Space-savingPlug-inSignalConditionersF-UNIT

MSYSTEMM-System Co.,Ltd.

愛模愛模系統(tǒng)有限公司

FSE-160-L/Q

Space-savingPlug-inSignalConditionersF-UNIT

MSYSTEMM-System Co.,Ltd.

愛模愛模系統(tǒng)有限公司

FSE-160-P

Space-savingPlug-inSignalConditionersF-UNIT

MSYSTEMM-System Co.,Ltd.

愛模愛模系統(tǒng)有限公司

FSE-160-P/Q

Space-savingPlug-inSignalConditionersF-UNIT

MSYSTEMM-System Co.,Ltd.

愛模愛模系統(tǒng)有限公司

FSE-160-R

Space-savingPlug-inSignalConditionersF-UNIT

MSYSTEMM-System Co.,Ltd.

愛模愛模系統(tǒng)有限公司

FSE-160-R/Q

Space-savingPlug-inSignalConditionersF-UNIT

MSYSTEMM-System Co.,Ltd.

愛模愛模系統(tǒng)有限公司

FSJ160D

70A,100V,0.022Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSJ160R

70A,100V,0.022Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSLC-C160W

1.5-2.0GHzBandChipMultilayer90deg.3dBSplitter

HitachiHitachi Semiconductor

日立日立公司

FSMD160

SurfaceMountPTCFSMDSeries

DBLECTRODB Lectro Inc

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55
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326
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GeneSiC
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55
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GeneSiC Semiconductor
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DO-4
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