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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
FQD1N60CTM	文件：557.93 Kbytes Page：9 Pages	N-Channel QFET? MOSFET 600 V, 1.0 A, 11.5 廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD1N60TM	文件：549.28 Kbytes Page：9 Pages	600VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQI1N60	文件：545.42 Kbytes Page：9 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQN1N60C	文件：677.13 Kbytes Page：8 Pages	600VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQP1N60	文件：519.409 Kbytes Page：8 Pages	QFETN-CHANNEL FEATURES ?AdvancedNewDesign ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?VeryLowIntrinsicCapacitances ?ExcellentSwitchingCharacteristics ?UnrivalledGateCharge:5.0nC(Typ.) ?ExtendedSafeOperatingArea ?LowerRDS(ON):9.3?(Typ.)	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQP1N60	文件：65.34 Kbytes Page：1 Pages	600VN-ChannelMOSFET DESCRIPTION TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergy	TGS Tiger Electronic Co.,Ltd	TGS
FQPF1N60	文件：542.04 Kbytes Page：8 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQPF1N60	文件：548.52 Kbytes Page：8 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQPF1N60T	文件：548.52 Kbytes Page：8 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQT1N60C	文件：1.04346 Mbytes Page：8 Pages	N-ChannelQFETMOSFET600V,0.2A,11.5Ohm Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor? ’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformance	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQT1N60CTF-WS	文件：1.04346 Mbytes Page：8 Pages	N-ChannelQFETMOSFET600V,0.2A,11.5Ohm Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor? ’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformance	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQU1N60	文件：543.8 Kbytes Page：9 Pages	600VN-ChannelMOSFET TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenerg	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQU1N60	文件：549.28 Kbytes Page：9 Pages	600VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQU1N60C	文件：640.5 Kbytes Page：9 Pages	600VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQU1N60C	文件：758.35 Kbytes Page：9 Pages	600VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQU1N60C	文件：824.93 Kbytes Page：8 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingCoriseSemiconductor?sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
FQU1N60C	文件：557.93 Kbytes Page：9 Pages	N-ChannelQFET?MOSFET600V,1.0A,11.5廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQU1N60C	文件：557.93 Kbytes Page：9 Pages	N-ChannelQFET?MOSFET600V,1.0A,11.5廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQU1N60C	文件：330.62 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=11.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
FQU1N60CTU	文件：557.93 Kbytes Page：9 Pages	N-ChannelQFET?MOSFET600V,1.0A,11.5廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild

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詳細(xì)參數(shù)

型號(hào)：
FQD1N60CTM
功能描述：
MOSFET N-CH/600V/1A/ QFET C-Series
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
中天科工半導(dǎo)體（深圳）有限公司	FQD1N60CTM	onsemi	24+	TO-252AA	30000	晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品	詢價(jià)
深圳市納艾斯科技有限公司	FQD1N60CTM	FSC	2020+	TO-252	8000	只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增	詢價(jià)
標(biāo)準(zhǔn)國(guó)際(香港)有限公司	FQD1N60CTM	ONSEMI	2021	NA	560000	全新原裝!優(yōu)勢(shì)庫(kù)存熱賣中!	詢價(jià)
深圳市航潤(rùn)創(chuàng)能電子集團(tuán)有限公司	FQD1N60CTM	FAIRCHILDONSEMICONDUCTOR	21+	NA	17500	只做原裝,假一罰十	詢價(jià)
深圳市坤融電子科技有限公司	FQD1N60CTM	ON/安森美	24+	TO-252	15683	只做原廠渠道可追溯貨源	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	FQD1N60CTM	0N	2021+	DPAK-3	9000	原裝現(xiàn)貨,隨時(shí)歡迎詢價(jià)	詢價(jià)
深圳市潤(rùn)聯(lián)芯城科技有限公司	FQD1N60CTM	ONSEMI/安森美	20+	TO-252	10000	只做原裝正品	詢價(jià)
深圳市智連鑫科技有限公司	FQD1N60CTM	ON	23+	24-TSSOP	8000	只做原裝正品,假一罰十	詢價(jià)
深圳市永貝爾科技有限公司	FQD1N60CTM	Fairchild(飛兆/仙童)	2023+	N/A	4550	全新原裝正品	詢價(jià)
深圳市高捷芯城科技有限公司	FQD1N60CTM	onsemi(安森美)	23+	TO-252	9555	支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。	詢價(jià)

更多FQD1N60CTM供應(yīng)商更新時(shí)間2024-10-22 19:41:00

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