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FQD10N20CTM

N-Channel QFET MOSFET 200 V, 7.8 A, 360 mOhm

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features ?7.8A,200V,RDS(on)=360m?(Max.)@VGS=10V,ID=3.9A ?LowGateCharge(Typ.20nC) ?LowCrss(Typ

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQD10N20CTM

N-channel Enhancement Mode Power MOSFET

Features ?VDS=200V,ID=8A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FQD10N20L

N-Channel200V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

FQD10N20L

200VLOGICN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQD10N20L

N-ChannelQFETMOSFET200V,7.6A,360m

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQD10N20L

N-ChannelQFETMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQD10N20L

N-ChannelQFET?MOSFET200V,7.6A,360m廓

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQD10N20LTF

N-ChannelQFETMOSFET200V,7.6A,360m

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQD10N20LTM

N-channelEnhancementModePowerMOSFET

Features ?VDS=200V,ID=8A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FQD10N20LTM

N-Channel200V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

FQD10N20LTM

N-ChannelQFET?MOSFET200V,7.6A,360m廓

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQD10N20TM

200VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQE10N20C

200VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQE10N20LC

200VLogicN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQI10N20

200VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQI10N20C

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQI10N20L

200VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQP10N20

200VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQP10N20

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQP10N20

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planarstripe,DMOStechnology. Features ?7.8A,200V,RDS(on)=0.36?(Max.)@VGS=10V ?LowGateCharge(Typ.13.5nC) ?LowCrss(Typ.13pF)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

詳細參數(shù)

  • 型號:

    FQD10N20CTM

  • 功能描述:

    MOSFET N-CH/200V/10A/QFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應商型號品牌批號封裝庫存備注價格
ON
24+
TO252
168
只做原裝正品,假一賠十
詢價
FAIRCHILD/仙童
24+
TO252
8950
BOM配單專家,發(fā)貨快,價格低
詢價
ON/安森美
20+原裝正品
TO-252
6000
大量現(xiàn)貨,免費發(fā)樣。
詢價
ON/安森美
21+
NA
17500
只做原裝,假一罰十
詢價
ON
21+
TO-252
30000
全新原裝公司現(xiàn)貨
詢價
FAIRCHILD/仙童
22+
TO-252
9800
只做原裝正品假一賠十!正規(guī)渠道訂貨!
詢價
ON/安森美
22+
DAK
14900
原裝正品
詢價
FAIRCHILD/仙童
22+
TO-252
21000
原廠原包裝。假一罰十。可開13%增值稅發(fā)票。
詢價
FAIRCNTLD
23+
SO-252
25000
代理原裝現(xiàn)貨,假一賠十
詢價
ON(安森美)
2023+
D-PAK
4550
全新原裝正品
詢價
更多FQD10N20CTM供應商 更新時間2025-1-1 19:12:00