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FQD6N40

400VN-ChannelMOSFET

Features ?4.2A,400V,RDS(on)=1.15?@VGS=10V ?Lowgatecharge(typical13nC) ?LowCrss(typical9.5pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQD6N40C

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4.5A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQD6N40C

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQI6N40

400VN-ChannelMOSFET

Features ?5.5A,400V,RDS(on)=1.15?@VGS=10V ?Lowgatecharge(typically13nC) ?LowCrss(typically9.5pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQI6N40C

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQP6N40

400VN-ChannelMOSFET

400VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQP6N40C

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQP6N40C

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQP6N40CF

400VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQP6N40CF

400VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQPF6N40C

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQPF6N40CF

400VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQU6N40

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4.2A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.15Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQU6N40

400VN-ChannelMOSFET

Features ?4.2A,400V,RDS(on)=1.15?@VGS=10V ?Lowgatecharge(typical13nC) ?LowCrss(typical9.5pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQU6N40C

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HFD6N40S

400VN-ChannelMOSFET

SEMIHOW

SemiHow Co.,Ltd.

HFU6N40S

400VN-ChannelMOSFET

SEMIHOW

SemiHow Co.,Ltd.

IRF6N40

POWERMOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitching regulators,conveters,solenoidandrelaydrivers. FEATURES ●?HigherCurrentRating ?●LowerrDS(ON),LowerCapacitances ?●LowerTotalGateCharge ?

SUNTAC

Suntac Electronic Corp.

KSM6N40C

400VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMD6N40

400VN-CHANNELMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

詳細參數(shù)

  • 型號:

    FQB6N40CTM

  • 功能描述:

    MOSFET N-CH/400V/6A/CFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應商型號品牌批號封裝庫存備注價格
FAIRCHILD/仙童
24+
TO263
8950
BOM配單專家,發(fā)貨快,價格低
詢價
onsemi
24+
D2PAK(TO-263)
30000
晶體管-分立半導體產(chǎn)品-原裝正品
詢價
ON/安森美
2023+
SMD
15000
AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
詢價
onsemi(安森美)
23+
D2PAK
8357
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
詢價
ONSEMI/安森美
23+
TO-263-2
360000
專業(yè)供應MOS/LDO/晶體管/有大量價格低
詢價
FSC
17+
TO-263
6200
詢價
FAIRCHILD
22+23+
TO263
36356
絕對原裝正品全新進口深圳現(xiàn)貨
詢價
FSC
1844+
TO263
9852
只做原裝正品假一賠十為客戶做到零風險!!
詢價
FAIRCHIL
24+
TO-263
90000
一級代理商進口原裝現(xiàn)貨、價格合理
詢價
安森美
21+
12588
原裝現(xiàn)貨,價格優(yōu)勢
詢價
更多FQB6N40CTM供應商 更新時間2025-1-1 16:36:00