FOD817AW中文資料仙童半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

Description

The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD617/817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.

Features

■ AC input response (FOD814 only)

■ Applicable to Pb-free IR reflow soldering

■ Compact 4-pin package

■ Current transfer ratio in selected groups:

FOD617A: 40–80 FOD817: 50–600

FOD617B: 63–125 FOD817A:80–160

FOD617C:100–200 FOD817B: 130–260

FOD617D:160–320 FOD817C:200–400

FOD814: 20–300 FOD817D:300–600

FOD814A: 50–150

■ C-UL, UL and VDE approved

■ High input-output isolation voltage of 5000Vrms

■ Higher operating temperatures (versus FODXXX counterparts)

■ Minimum BVCEO of 70V guaranteed

Applications

FOD814 Series

■ AC line monitor

■ Unknown polarity DC sensor

■ Telephone line interface

FOD617 and FOD817 Series

■ Power supply regulators

■ Digital logic inputs

■ Microprocessor inputs