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FQB60N03L

N-ChannelLogicLevelPWMOptimizedPowerMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQB60N03L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.0135Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FQD60N03L

N-ChannelLogicLevelMOSFETs30V,30A,0.023ohm

GeneralDescription ThisdeviceemploysadvancedMOSFETtechnologyandfeatureslowgatechargewhilemaintaininglowonresistance.Optimizedforswitchingapplications,thisdeviceimprovestheoverallefficiencyofDC/DCconvertersandallowsoperationtohigherswitchingfrequencies. F

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD60N03L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=40.3A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.019Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FQP60N03L

30VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features ?60A,30V.RDS(on)=0.0135?@VGS=10V ?Lowgatecharge(typical18.5nC) ?LowCrss(typical155pF) ?Fa

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQPF60N03L

30VLOGICN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

GE60N03

N-CHANNELENHANCEMENTMODEPOWERMOSFET

ETLE-Tech Electronics LTD

亞歷電子亞歷電子有限公司

GE60N03

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description TheGE60N03providethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsandsuitedforlowvoltageapplicationsuchas

GTMGTM CORPORATION

勤益投資控股勤益投資控股股份有限公司

GFP60N03

N-ChannelEnhancement-ModeMOSFET

Features ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignforUltraLow On-Resistance ?SpeciallyDesignedforLowVoltageDC/DC Converters ?FastSwitchingforHighEfficiency

GE

GE Industrial Company

GI60N03

N-CHANNELENHANCEMENTMODEPOWERMOSFET

GTMGTM CORPORATION

勤益投資控股勤益投資控股股份有限公司

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FAIRCHILD/仙童
24+
TO263
58000
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23+
10000
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N/A
23+
DIP-8
1070
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RF
20+
射頻元件
255
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78
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RF Solutions
23+
N/A
3265
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24+
N/A
65000
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SCHURTER Inc.
24+
LINE FILTER 140A
9350
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JAE
24+
con
35960
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N/A
23+
NA
15659
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更多FOB60N03L供應(yīng)商 更新時(shí)間2025-1-28 20:00:00