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FMV11N60E

N-CHANNEL SILICON POWER MOSFET

SuperFAP-E3series Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedura

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FMV11N60E

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

GC11N60F

PowerFactorCorrection

Description TheGC11N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

GC11N60F

PowerFactorCorrection(PFC)

Description TheGC11N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

GC11N60F

PowerFactorCorrection(PFC)

Description TheGC11N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

GC11N60K

PowerFactorCorrection(PFC)

Description TheGC11N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

GC11N60K

PowerFactorCorrection(PFC)

Description TheGC11N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

GC11N60K

PowerFactorCorrection

Description TheGC11N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

GC11N60T

PowerFactorCorrection

Description TheGC11N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

GC11N60T

PowerFactorCorrection(PFC)

Description TheGC11N60usesadvancedsuperjunctiontechnology anddesigntoprovideexcellentRDS(ON),lowgatechargeand operationwithlowgatevoltages.Thisdeviceissuitablefor industry’sAC-DCSMPSrequirementforPFC,AC/DCpower conversion,andindustrialpowerapplication. Ap

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    FMV11N60

  • 制造商：

    FUJI

  • 制造商全稱：

    Fuji Electric

  • 功能描述：

    N-CHANNEL SILICON POWER MOSFET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
FUJI
24+
TO-220F
4000
原裝原廠代理 可免費(fèi)送樣品
 詢價(jià)
FUJI/富士電機(jī)
2410+
TO-220F
3000
原裝正品.假一賠百.正規(guī)渠道.原廠追溯.
 詢價(jià)
FUJI
17+
NA
6200
100%原裝正品現(xiàn)貨
 詢價(jià)
FUJI
2016+
TO-220F
6528
房間原裝進(jìn)口現(xiàn)貨假一賠十
 詢價(jià)
FUJI
23+
TO-220F
8650
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
FUJI
2020+
TO-220
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
FUJI
24+
TO220
65300
一級(jí)代理/放心購買!
 詢價(jià)
FUJI/富士電機(jī)
2447
TO-220F
100500
一級(jí)代理專營品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長期排單到貨
 詢價(jià)
FUJI
21+
TO-220F
2849
原裝現(xiàn)貨假一賠十
 詢價(jià)
FUJI
21+
TO-220F
1625
只做原裝正品,不止網(wǎng)上數(shù)量,歡迎電話微信查詢!
 詢價(jià)
更多FMV11N60供應(yīng)商 更新時(shí)間2025-3-24 15:07:00

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