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FMV

MAGNETIC SWITCHES

SHIELD

SHIELD s.r.l.

FMV03N60E

N-CHANNEL SILICON POWER MOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica

FujiFuji Electric

富士電機富士電機株式會社

FMV05N50E

N-CHANNEL SILICON POWER MOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica

FujiFuji Electric

富士電機富士電機株式會社

FMV05N60E

N-CHANNEL SILICON POWER MOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applicati

FujiFuji Electric

富士電機富士電機株式會社

FMV06N60E

N-CHANNEL SILICON POWER MOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica

FujiFuji Electric

富士電機富士電機株式會社

FMV06N60ES

N-CHANNEL SILICON POWER MOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.7±0.5V) Highavalanchedurability Applica

FujiFuji Electric

富士電機富士電機株式會社

FMV06N90E

N-CHANNEL SILICON POWER MOSFET

SuperFAP-E3series Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.0±0.5V) Highaval

FujiFuji Electric

富士電機富士電機株式會社

FMV07N50E

N-CHANNEL SILICON POWER MOSFET

SuperFAP-E3series Features ?Maintainsbothlowpowerlossandlownoise ?LowerRDS(on)characteristic ?Morecontrollableswitchingdv/dtbygateresistance ?SmallerVGSringingwaveformduringswitching ?Narrowbandofthegatethresholdvoltage(3.0±0.5V) ?Highaval

FujiFuji Electric

富士電機富士電機株式會社

FMV08N50E

N-CHANNEL SILICON POWER MOSFET

SuperFAP-E3series Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highaval

FujiFuji Electric

富士電機富士電機株式會社

FMV09N90E

N-CHANNEL SILICON POWER MOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.0±0.5V) Highavalanchedurability Applications

FujiFuji Electric

富士電機富士電機株式會社

FMV11N60E

N-CHANNEL SILICON POWER MOSFET

SuperFAP-E3series Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedura

FujiFuji Electric

富士電機富士電機株式會社

FMV20N60S1

rN-Channel enhancement mode power MOSFET

Features Lowon-stateresistance Lowswitchingloss easytouse(morecontrollabeswitchingdV/dtbyRg) Applications UPS Server Telecom Powerconditionersystem Powersupply

FujiFuji Electric

富士電機富士電機株式會社

FMV20N60S1

isc N-Channel MOSFET Transistor

?DESCRITION ?UPS(UninterruptiblePowerSupply) ?Powerconditionersystem ?Powersupply ?FEATURES ?Lowon-resistance:RDS(on)≤0.19?(max) ?Lowswitchingloss ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FMV23N50E

N-CHANNEL SILICON POWER MOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applications

FujiFuji Electric

富士電機富士電機株式會社

FMV23N50ES

N-CHANNEL SILICON POWER MOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications

FujiFuji Electric

富士電機富士電機株式會社

FMV-3FU

Damper Diodes (Diode modulation Type)

DamperDiodes(DiodemodulationType)

SankenSanken electric

三墾三墾電氣株式會社

FMV-3FU

Damper Diode (Diode modulation for TV)

DamperDiodes(DiodemodulationType)

SankenSanken electric

三墾三墾電氣株式會社

FMV-3GU

Damper Diode (Diode modulation for TV)

DamperDiodes(DiodemodulationType)

SankenSanken electric

三墾三墾電氣株式會社

FMV-3GU

Damper Diodes (Diode modulation Type)

DamperDiodes(DiodemodulationType)

SankenSanken electric

三墾三墾電氣株式會社

FMV60N160S2HF

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=23.9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=160mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    FMV

  • 制造商：

    SHIELD

  • 制造商全稱：

    SHIELD s.r.l.

  • 功能描述：

    MAGNETIC SWITCHES

供應商型號品牌批號封裝庫存備注價格
FUJI富士
TO-220F
3200
原裝長期供貨!
 詢價
FREQUENCYMAN
05+
原廠原裝
4433
只做全新原裝真實現(xiàn)貨供應
 詢價
FUJI
2016+
TO-220F
3000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
FUJI
23+
TO220F
7635
全新原裝優(yōu)勢
 詢價
原廠
23+
TO-220
5000
原裝正品,假一罰十
 詢價
FUJI
17+
TO-220F
6200
詢價
FUJI
2020+
TO-220F
49
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
24+
TO-220F
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價
FUJI
19+
71664
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
FujiSemiconductor
新
5
全新原裝 貨期兩周
 詢價
更多FMV供應商 更新時間2024-12-30 16:20:00

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