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SHIELD s.r.l.

FMV03N60E

N-CHANNEL SILICON POWER MOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FMV05N50E

N-CHANNEL SILICON POWER MOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FMV05N60E

N-CHANNEL SILICON POWER MOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applicati

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FMV06N60E

N-CHANNEL SILICON POWER MOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FMV06N60ES

N-CHANNEL SILICON POWER MOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.7±0.5V) Highavalanchedurability Applica

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FMV06N90E

N-CHANNEL SILICON POWER MOSFET

SuperFAP-E3series Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.0±0.5V) Highaval

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FMV07N50E

N-CHANNEL SILICON POWER MOSFET

SuperFAP-E3series Features ?Maintainsbothlowpowerlossandlownoise ?LowerRDS(on)characteristic ?Morecontrollableswitchingdv/dtbygateresistance ?SmallerVGSringingwaveformduringswitching ?Narrowbandofthegatethresholdvoltage(3.0±0.5V) ?Highaval

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FMV08N50E

N-CHANNEL SILICON POWER MOSFET

SuperFAP-E3series Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highaval

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FMV09N90E

N-CHANNEL SILICON POWER MOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.0±0.5V) Highavalanchedurability Applications

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

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供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
FUJI富士
TO-220F
3200
原裝長(zhǎng)期供貨!
 詢價(jià)
FREQUENCYMAN
05+
原廠原裝
4433
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
FUJI
2016+
TO-220F
3000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
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FUJI
23+
TO220F
7635
全新原裝優(yōu)勢(shì)
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原廠
23+
TO-220
5000
原裝正品,假一罰十
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FUJI
17+
TO-220F
6200
詢價(jià)
FUJI
2020+
TO-220F
49
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價(jià)
24+
TO-220F
5000
全現(xiàn)原裝公司現(xiàn)貨
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FUJI
19+
71664
原廠代理渠道,每一顆芯片都可追溯原廠；
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FujiSemiconductor
新
5
全新原裝 貨期兩周
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更多FMV供應(yīng)商 更新時(shí)間2025-3-14 16:20:00

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