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FMI05N60E

N-CHANNEL SILICON POWER MOSFET

FujiFuji Electric

富士電機富士電機株式會社

FMP05N60E

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica

FujiFuji Electric

富士電機富士電機株式會社

FMV05N60E

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applicati

FujiFuji Electric

富士電機富士電機株式會社

H05N60

N-ChannelPowerFieldEffectTransistor

Description ThisadvancedhighvoltageMOSFETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedswitchingapplicationssuchaspowersupl

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H05N60E

N-ChannelPowerFieldEffectTransistor

Description ThisadvancedhighvoltageMOSFETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedswitchingapplicationssuchaspowersupl

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H05N60F

N-ChannelPowerFieldEffectTransistor

Description ThisadvancedhighvoltageMOSFETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedswitchingapplicationssuchaspowersupl

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

MCU05N60

N-ChannelEnhancementModeFieldEffectTransistor

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MCU05N60A

N-ChannelEnhancementModeFieldEffectTransistor

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MCU05N60A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MGS05N60D

InsulatedGateBipolarTransistor

InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisIGBTcontainsabuilt–infreewheelingdiodeandagateprotectionzener.Fastswitchingcharacteristicsresultinefficientoperationathigherfrequencies. ?Built–InFreeWheelingDiode ?Built–InGateProtecti

Motorola

Motorola, Inc

MGS05N60D

InsulatedGateBipolarTransistor

InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisIGBTcontainsabuilt–infreewheelingdiodeandagateprotectionzener.Fastswitchingcharacteristicsresultinefficientoperationathigherfrequencies. ?Built–InFreeWheelingDiode ?Built–InGateProtection

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MMG05N60D

InsulatedGateBipolarTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MMG05N60D

POWERLUXIGBT

ThisIGBTcontainsabuilt–infreewheelingdiodeandagateprotectionzener.Fastswitchingcharacteristicsresultinefficientoperationathigherfrequencies. ?Built–InFreeWheelingDiode ?Built–InGateProtectionZenerDiode ?IndustryStandardPackage(SOT223) ?HighSpeedEoff:Typic

Motorola

Motorola, Inc

SSD05N60J

N-ChEnhancementModePowerMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

詳細參數(shù)

  • 型號：

    FMI05N60E

  • 制造商：

    FUJI

  • 制造商全稱：

    Fuji Electric

  • 功能描述：

    N-CHANNEL SILICON POWER MOSFET

供應(yīng)商型號品牌批號封裝庫存備注價格
F
23+
T-PACK(L)
10000
公司只做原裝正品
 詢價
F
22+
T-PACK(L)
6000
十年配單,只做原裝
 詢價
FUJI
原廠封裝
1000
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
 詢價
F
22+
T-PACK(L)
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
FUJI/富士電機
23+
N/A
11550
FUJI/富士電機系列在售
 詢價
FUJI/富士電機
23+
N/A
9000
專業(yè)配單,原裝正品假一罰十,代理渠道價格優(yōu)
 詢價
FUJI/富士電機
23+
TO262
28888
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
更多FMI05N60E供應(yīng)商 更新時間2024-11-18 10:05:00

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