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FKBL408

FAST RECOVERY BRIDGE RECTIFIERS

FEATURES: *Highcasedielectricstrengthof2000VDC *Highsurgecurrentcapability *Highreliability *Lowreversecurrent *Lowforwardvoltagedrop *Fastswitchingforhighefficiency *Idealforprintedcircuitboard *Pb/RoHSFree

EIC

EIC discrete Semiconductors

FKBL408

FAST RECOVERY

EIC

EIC discrete Semiconductors

FKBL408

FAST RECOVERY BRIDGE RECTIFIERS

EIC

EIC discrete Semiconductors

FL408

IN-LINEMINIATURESINGLEPHASESILICONBRIDGE(VOLTAGE-50to800VoltsCURRENT-4.0Amperes)

FEATURES ?PlasticmaterialhasUnderwritersLaboratoryFlammabilityClassification94V-O ?Idealforprintedcircuitboard ?Reliablelowcostconstructionutilizingmoldedplastictechnique ?Surgeoverloadrating:200Amperespeak ?Pbfreeproductareavailable:99SnabovecanmeetRohs

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

FL408

IN-LINEMINIATURESINGLEPHASESILICONBRIDGE

VOLTAGE-50to800VoltsCURRENT-4.0Amperes FEATURES ●Surgeoverloadrating:200Amperespeak ●Idealforprintedcircuitboard ●PlasticpackagehasUnderwriterLaboratoryFlammabilityClassification94V-O ●Reliablelowcostconstructionutilizingmoldedplastictechnique

TRSYS

Transys Electronics

FL408

IN-LINEMINIATURESINGLEPHASESILICONBRIDGERECTIFIER

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

FR408

HeterojunctionBipolarTransistorTechnology(InGaPHBT)

HeterojunctionBipolarTransistorTechnology(InGaPHBT) HighEfficiency/LinearityAmplifier TheMMZ09312Bisa2--stagehighefficiency,ClassABInGaPHBTamplifierdesignedforuseasalineardriveramplifierinwirelessbasestationapplicationsaswellasanoutputstageinfemtocellorr

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

FR408

HeterojunctionBipolarTransistorTechnology(InGaPHBT)

HeterojunctionBipolarTransistorTechnology(InGaPHBT) HighEfficiency/LinearityAmplifier TheMMA25312BisahighefficiencyInGaPHBTamplifierdesignedforusein2400MHzISMapplications,WLAN(802.11g),WiMAX(802.16e)andwirelessbroadbandmeshnetworks.Itissuitableforapplications

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

FR408

HeterojunctionBipolarTransistorTechnology(InGaPHBT)

HeterojunctionBipolarTransistorTechnology(InGaPHBT) HighEfficiency/LinearityAmplifier TheMMZ25332Bisa2--stage,highlinearityInGaPHBTbroadbandamplifierdesignedforfemtocell,picocell,WLAN(802.11g/n),W--CDMA,TD--SCDMAandLTEwirelessbroadbandapplications.Itprovidesexcep

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

FR408

HeterojunctionBipolarTransistorTechnology(InGaPHBT)

HeterojunctionBipolarTransistorTechnology(InGaPHBT) HighEfficiency/LinearityAmplifier TheMMA25312Bisa2-stagehighefficiencyInGaPHBTdriveramplifierdesignedforusein2400MHzISMapplications,WLAN(802.11g),WiMAX(802.16e)andwirelessbroadbandmeshnetworks.Itissuitablef

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號：

    FKBL408

  • 制造商：

    EIC

  • 制造商全稱：

    EIC discrete Semiconductors

  • 功能描述：

    FAST RECOVERY

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
EIC
23+
NA
39960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
ELECIND
24+
35200
一級代理/放心采購
 詢價(jià)
24+
N/A
75000
一級代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
WIMA
23+
原廠封裝
11888
專做原裝正品,假一罰百!
 詢價(jià)
P-DUKE
13+
ROHS
1313
原裝分銷
 詢價(jià)
P-DUKE
12+
SIP/DIP
870
代理穩(wěn)壓模塊/一定是全新原廠原裝產(chǎn)品
 詢價(jià)
P-DUKE
23+
DIP
450
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價(jià)
PMATE
24+
原廠封裝
8000
原裝現(xiàn)貨假一罰十
 詢價(jià)
P-DUKE
23+
DIP
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
 詢價(jià)
P-DUKE
2021+
DIP
11000
十年專營原裝現(xiàn)貨,假一賠十
 詢價(jià)
更多FKBL408供應(yīng)商 更新時(shí)間2025-3-14 18:33:00

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