首頁 >FGA60N60UFD>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
FGA60N60UFD | 600V, 60A Field Stop IGBT | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | |
600V, 60A Field Stop IGBT | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
包裝：管件 封裝/外殼：TO-3P-3，SC-65-3 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 120A 298W TO3P | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
IGBT-FieldStop600V,60A Description UsingnovelfieldstopIGBTtechnology,ONSemiconductor’snew seriesoffieldstop2ndgenerationIGBTsoffertheoptimum performanceforsolarinverter,UPS,welder,telecom,ESSandPFC applicationswherelowconductionandswitchinglossesareessential. Features ?Maximum | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
600V,60AFieldStopIGBT GeneralDescription UsingNovelFieldStopIGBTTechnology,Fairchild’snewseriesofFieldStopIGBTsoffertheoptimumperformanceforInductionHeating,UPS,SMPSandPFCapplicationswherelowconduc tionandswitchinglossesareessential. Features ?Highcurrentcapability ? | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
600V,60AFieldStopIGBT UsingnovelfieldstopIGBTtechnology,Fairchild’sfieldstopGBTsoffertheoptimumperformanceforsolarinverter,UPS,welderandPFCapplicationswherelowconductionandswitchnglossesareessential. | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
600V,60AFieldStopIGBT Features ?HighCurrentCapability ?LowSaturationVoltage:VCE(sat)=2.3V@IC=60A ?HighInputImpedance ?FastSwitching ?RoHSCompliant GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild’sfieldstop IGBTsoffertheoptimumperformanceforsolarinverter,UP | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
Field-StopIGBT DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.9V@IC=60A ·HighSpeedSwitching ·LowPowerLoss APPLICATIONS ·SolarConverters ·WeldingConverters ·PFC ·UPS | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
600V,60AFieldStopIGBT UsingnovelfieldstopIGBTtechnology,Fairchild’sfieldstopGBTsoffertheoptimumperformanceforsolarinverter,UPS,welderandPFCapplicationswherelowconductionandswitchnglossesareessential. | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
600V,60AFieldStopIGBT GeneralDescription UsingNovelFieldStopIGBTTechnology,Fairchild’snewseriesofFieldStopIGBTsoffertheoptimumperformanceforInductionHeating,UPS,SMPSandPFCapplicationswherelowconduc tionandswitchinglossesareessential. Features ?Highcurrentcapability ? | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
600V,60AFieldStopIGBT GeneralDescription UsingNovelFieldStopIGBTTechnology,Fairchild’snewseriesofFieldStopIGBTsoffertheoptimumperformanceforSolarInverter,UPS,SMPS,IHandPFCapplicationswherelowconductionandswitchinglossesareessential. Features ?MaximumJunctionTemperature: | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
IGBT-FieldStop600V,60A Description UsingnovelfieldstopIGBTtechnology,ONSemiconductor’snew seriesoffieldstop2ndgenerationIGBTsoffertheoptimum performanceforsolarinverter,UPS,welder,telecom,ESSandPFC applicationswherelowconductionandswitchinglossesareessential. Features ?Maximum | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
FieldStopIGBT DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.4V@IC=60A ·HighCurrentCapability ·HighInputImpedance ·FastSwitching APPLICATIONS ·InductionHeating,UPS ·AC&DCmotorcontrolsandgeneralpurposeinverters | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
600V,60AFieldStopIGBT GeneralDescription UsingNovelFieldStopIGBTTechnology,Fairchild’snewseriesofFieldStopIGBTsoffertheoptimumperformanceforInductionHeating,UPS,SMPSandPFCapplicationswherelowconduc tionandswitchinglossesareessential. Features ?Highcurrentcapability ? | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
600V,60AFieldStopIGBT GeneralDescription UsingNovelFieldStopIGBTTechnology,Fairchild’snewseriesofFieldStopIGBTsoffertheoptimumperformanceforInductionHeating,UPS,SMPSandPFCapplicationswherelowconduc tionandswitchinglossesareessential. Features ?Highcurrentcapability ? | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
600Vinsulatedgatebipolartransistor | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
600Vinsulatedgatebipolartransistor | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PreliminaryTechnicalInformation | IXYS IXYS Corporation | IXYS | ||
SingleDieMOSFET | IXYS IXYS Corporation | IXYS |
詳細(xì)參數(shù)
- 型號：
FGA60N60UFD
- 功能描述：
IGBT 晶體管 600V 60A FIELD STOP
- RoHS：
否
- 制造商：
Fairchild Semiconductor
- 配置：
集電極—發(fā)射極最大電壓
- VCEO：
650 V
- 集電極—射極飽和電壓：
2.3 V
- 柵極/發(fā)射極最大電壓：
20 V 在25
- C的連續(xù)集電極電流：
150 A
- 柵極—射極漏泄電流：
400 nA
- 功率耗散：
187 W
- 封裝/箱體：
TO-247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
TO-3P |
1000 |
原裝長期供貨! |
詢價 | |||
FAIRCHILD |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費送樣 |
詢價 | ||
仙童 |
19+ |
TO-3P |
71342 |
原廠代理渠道,每一顆芯片都可追溯原廠； |
詢價 | ||
FAIRCHILD |
22+23+ |
TO-3P |
44946 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價 | ||
ON/安森美 |
19+ |
TO-3P |
32000 |
原裝正品,現(xiàn)貨特價 |
詢價 | ||
FSC |
20+ |
TO-3PN |
36900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
FAIRCHILD/仙童 |
24+ |
TO-3P |
1000 |
原裝現(xiàn)貨 |
詢價 | ||
ON/安森美 |
23+ |
TO-3P |
90000 |
只做原廠渠道價格優(yōu)勢可提供技術(shù)支持 |
詢價 | ||
FREESCALE |
2021+ |
20 |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
ON/安森美 |
22+ |
TO-3P |
13800 |
原裝正品,品質(zhì)保證,值得你信賴 |
詢價 |
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