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FGA20N120FTDTU

1200V, 20A Trench IGBT

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FGA20N120FTDTU

Package：TO-3P-3，SC-65-3；包裝：管件 類別：分立半導體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 1200V 40A 298W TO3PN

ONSEMION Semiconductor

安森美半導體安森美半導體公司

G20N120

63A,1200V,NPTSeriesN-ChannelIGBT

63A,1200V,NPTSeriesN-ChannelIGBT TheHGTG20N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETa

Intersil

Intersil Corporation

G20N120

45A,1200V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

45A,1200V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETs andbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlos

Intersil

Intersil Corporation

G20N120

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas

Intersil

Intersil Corporation

G20N120

34A,1200VN-ChannelIGBT

Description TheHGTG20N120E2isaMOSgated,highvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvari

Intersil

Intersil Corporation

G20N120

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

HGH20N120A

N-ChannelEnhancementInsulatedGateBipolarTransistor

Features ?Lowsaturationvoltage,Vce(on)(typ)=2.3V@Vge=15V ?Highinputimpedance ?Fieldstoptrenchtechnologyoffersuperior conductionandswitchingperformances, ?Highspeedswitching Applications ?InductionheatingandMicrowaveoven ?Softswitchingapplications

HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

華汕電子器件汕頭華汕電子器件有限公司

HGTG20N120

34A,1200VN-ChannelIGBT

Description TheHGTG20N120E2isaMOSgated,highvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvari

Intersil

Intersil Corporation

HGTG20N120CN

63A,1200V,NPTSeriesN-ChannelIGBT

63A,1200V,NPTSeriesN-ChannelIGBT TheHGTG20N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETa

Intersil

Intersil Corporation

產(chǎn)品屬性

  • 產(chǎn)品編號：

    FGA20N120FTDTU

  • 制造商：

    onsemi

  • 類別：

    分立半導體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝：

    管件

  • IGBT 類型：

    溝槽型場截止

  • 不同?Vge、Ic 時?Vce(on)（最大值）：

    2V @ 15V，20A

  • 輸入類型：

    標準

  • 工作溫度：

    -55°C ~ 150°C（TJ）

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-3P-3，SC-65-3

  • 供應商器件封裝：

    TO-3P

  • 描述：

    IGBT 1200V 40A 298W TO3PN

供應商型號品牌批號封裝庫存備注價格
onsemi(安森美)
23+
TO-3P
1224
原廠訂貨渠道,支持BOM配單一站式服務
 詢價
FAI
24+
300
詢價
Fairchild
23+
TO-3P
7750
全新原裝優(yōu)勢
 詢價
2017+
TO-3P
28562
只做原裝正品假一賠十!
 詢價
FAIRCHILD
25+23+
TO-3P
36882
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
FAIRCHI
18+
TO-3P
85600
保證進口原裝可開17%增值稅發(fā)票
 詢價
FAI
2018+
26976
代理原裝現(xiàn)貨/特價熱賣!
 詢價
FAIRCHILD/仙童
22+
TO-3P
21130
原裝正品現(xiàn)貨
 詢價
三年內(nèi)
1983
只做原裝正品
 詢價
FAIRCHILD
20+
原裝
65790
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
更多FGA20N120FTDTU供應商 更新時間2025-3-29 8:12:00

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