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HAF2011

SiliconNChannelMOSFETSeriesPowerSwitching

Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe

HitachiHitachi Semiconductor

日立日立公司

HAF2011

SiliconNChannelMOSFETSeriesPowerSwitching

Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HAF2011(L)_15

SiliconNChannelMOSFETSeriesPowerSwitching

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HAF2011L

SiliconNChannelMOSFETSeriesPowerSwitching

Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HAF2011L

SiliconNChannelMOSFETSeriesPowerSwitching

Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe

HitachiHitachi Semiconductor

日立日立公司

HAF2011S

SiliconNChannelMOSFETSeriesPowerSwitching

Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe

HitachiHitachi Semiconductor

日立日立公司

HAF2011S

SiliconNChannelMOSFETSeriesPowerSwitching

Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HBO2011NIL

LampsforPhotolithography

Description PerkinElmerOptoelectronicsisaleadingmanufacturerofmercuryshortarclampsranginginoutputpowerfrom1000to8000watts.Theselampsareusedintheproductionofprintedcircuitboards,liquidcrystaldisplaysandsemiconductors.TheHSHSerieslampsareusedworldwideinmi

PerkinElmer

PerkinElmer Optoelectronics

HBO2011W

LampsforPhotolithography

Description PerkinElmerOptoelectronicsisaleadingmanufacturerofmercuryshortarclampsranginginoutputpowerfrom1000to8000watts.Theselampsareusedintheproductionofprintedcircuitboards,liquidcrystaldisplaysandsemiconductors.TheHSHSerieslampsareusedworldwideinmi

PerkinElmer

PerkinElmer Optoelectronics

HLMP-P2011

StandardSMTandThroughHoleLeadBendOptionsforSubminiatureLEDLamps

Description FlatTopPackage TheHLMP-PxxxSeries?attoplampsuseanuntinted,nondi?used,truncatedlenstoprovideawideradiationpatternthatisnecessaryforuseinbacklightingapplications.The?attoplampsarealsoidealforuseasemittersinlightpipeapplications. DomePackages

AVAGOAVAGO TECHNOLOGIES LIMITED

安華高

詳細參數(shù)

  • 型號:

    FE2011

  • 功能描述:

    Peripheral IC

供應(yīng)商型號品牌批號封裝庫存備注價格
FE
23+
BGAQFP
8659
原裝公司現(xiàn)貨!原裝正品價格優(yōu)勢.
詢價
WD
23+
65480
詢價
WD
NA
8560
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
詢價
FUJI
2023+
FIG2
5800
進口原裝,現(xiàn)貨熱賣
詢價
FLATRON
25+
QFP
3000
強調(diào)現(xiàn)貨,隨時查詢!
詢價
FLATRON
24+
QFP
240
詢價
FLATRON
2016+
PQFP
6000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
詢價
GNENSIS
23+
QFP208pb
8890
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
詢價
FLATRON
2005
QFP
240
原裝現(xiàn)貨海量庫存歡迎咨詢
詢價
GNENSIS
22+23+
QFP208pb
38008
絕對原裝正品全新進口深圳現(xiàn)貨
詢價
更多FE2011供應(yīng)商 更新時間2025-3-13 17:46:00