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FDZ493P中文資料仙童半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

FDZ493P
廠商型號(hào)

FDZ493P

功能描述

P-Channel 2.5V Specified PowerTrench BGA MOSFET -20V, -4.6A, 46mohm

文件大小

421 Kbytes

頁面數(shù)量

6

生產(chǎn)廠商 Fairchild Semiconductor
企業(yè)簡稱

Fairchild仙童半導(dǎo)體

中文名稱

飛兆/仙童半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-10 22:58:00

FDZ493P規(guī)格書詳情

General Description

Combining Fairchilds advanced 2.5V specified PowerTrench? process with state of the art BGA packaging process, the FDZ493P minimizes both PCB space and rDS(on). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handing capability,ultra-low profile packaging, low gate charge, and low rDS(on).

Features

■ Max rDS(on) = 46m? at VGS = –4.5V, ID = –4.6A

■ Max rDS(on) = 72m? at VGS = –2.5V, ID = –3.6A

■ Occupies only 2.25 mm2 of PCB area. Less than 50 of the area of SSOT-6.

■ Ultra-thin package: less than 0.80 mm height when mounted to PCB.

■ Outstanding thermal transfer characteristics:4 times better than SSOT-6.

■ Ultra-low Qg x rDS(on) figure-of-merit.

■ RoHS Compliant.

Application

■ Battery management

■ Load switch

■ Battery protection

產(chǎn)品屬性

  • 型號(hào):

    FDZ493P

  • 功能描述:

    MOSFET MFET -20V P-CH 2.5 V PowerTrench BGA

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
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FIRST
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IPS
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FSC/ON
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IPS
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SOT23
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FAIRCHILD
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NA
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FIRST
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