零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
FDS8958B | Dual N & P-Channel PowerTrench? MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 m廓 Q2-P-Channel: -30 V, -4.5 A, 51 m廓 | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | |
DualN&P-ChannelPowerTrenchMOSFET | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | ||
Highoutputpower:1.5mW,pigtailtype Laserdiode Highoutputpower:1.5mW,pigtailtype Features ●Highoutputpower:1.5mW ●High-speedresponse:1.25GbpsMax. ●1.3μmFP(Fabry-perot)laser Applications ●Opticalfibercommunications | HAMAMATSUHamamatsu Photonics Co.,Ltd. 濱松光子濱松光子學(xué)株式會(huì)社 | HAMAMATSU | ||
DualN&P-ChannelEnhancementModeFieldEffectTransistor GeneralDescription ThesedualN-andP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistanceandprovidesuperiorswitchingperfo | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
75Ω34dBCATVAmplifier50-1003MHz KeyFeatures ■HighGain:34dB@1003MHz ■AdjustableBias ■50-1003MHzBW ■46dBmV/chflattilt ■LowNoise:4.5dB ■ExcellentCompositeDistortion ■pHEMT/MESFETdevicetechnologies ■CompactSize:40P5x7QFN ■PowerConsumption(24V,260mA–5.8W) | QORVO Qorvo, Inc | QORVO | ||
75Ω34dBCATVAmplifier50-1003MHz KeyFeatures ■HighGain:34dB@1003MHz ■AdjustableBias ■50-1003MHzBW ■46dBmV/chflattilt ■LowNoise:4.5dB ■ExcellentCompositeDistortion ■pHEMT/MESFETdevicetechnologies ■CompactSize:40P5x7QFN ■PowerConsumption(24V,260mA–5.8W) | QORVO Qorvo, Inc | QORVO | ||
75Ω34dBCATVAmplifier50-1003MHz KeyFeatures ■HighGain:34dB@1003MHz ■AdjustableBias ■50-1003MHzBW ■46dBmV/chflattilt ■LowNoise:4.5dB ■ExcellentCompositeDistortion ■pHEMT/MESFETdevicetechnologies ■CompactSize:40P5x7QFN ■PowerConsumption(24V,260mA–5.8W) | QORVO Qorvo, Inc | QORVO | ||
75Ω34dBCATVAmplifier50-1003MHz KeyFeatures ■HighGain:34dB@1003MHz ■AdjustableBias ■50-1003MHzBW ■46dBmV/chflattilt ■LowNoise:4.5dB ■ExcellentCompositeDistortion ■pHEMT/MESFETdevicetechnologies ■CompactSize:40P5x7QFN ■PowerConsumption(24V,260mA–5.8W) | QORVO Qorvo, Inc | QORVO | ||
DualEnhancementModeFieldEffectTransistor(NandPChannel) DualEnhancementModeFieldEffectTransistor(NandPChannel) | SamhopSamHop Microelectronics Corp. 三合微科三合微科股份有限公司 | Samhop | ||
8-bitMicro-controllerwith32KFlashembedded 8-BitMicro-controllerwith32KBflashembedded | SyncMosSyncMOS Technologies,Inc 新茂新茂國際科技股份有限公司 | SyncMos |
詳細(xì)參數(shù)
- 型號:
FDS8958B
- 功能描述:
MOSFET 30V 6.4A Dual N&P Ch PowerTrench
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
onsemi |
24+ |
8-SOIC(0.154,3.90mm 寬) |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢價(jià) | ||
FSC |
15+ |
原廠原裝 |
90000 |
進(jìn)口原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
FCS |
1818+ |
SOP-8 |
11846 |
詢價(jià) | |||
FSC |
2020+ |
SO-8 |
8000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
FSC |
21+ |
SOP8 |
2890 |
詢價(jià) | |||
FAIRCHILD/仙童 |
21+ |
6000 |
原裝正品 |
詢價(jià) | |||
ON/安森美 |
21+ |
SOP |
9852 |
只做原裝正品假一賠十!正規(guī)渠道訂貨! |
詢價(jià) | ||
ONSEMI |
22+ |
SOP8 |
2500 |
原裝正品,實(shí)單請聯(lián)系 |
詢價(jià) | ||
ON |
22+ |
SOP-8 |
2020 |
公司現(xiàn)貨,有掛就有貨。 |
詢價(jià) | ||
Bychip |
23+ |
SOP8 |
10000 |
高品質(zhì)替代,技術(shù)支持,參數(shù)選型 |
詢價(jià) |
相關(guān)規(guī)格書
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- FDSD0412-H-2R2M=P3
- FDSD0420-H-1R0M=P3
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- FDSD0630-H-1R0M=P3
- FDSD0630-H-2R2M=P3
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- FDV301N_NB9V005
- FDV302P_NB8V001
- FDV304P
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- FDW262P
- FDY100PZ
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- FDY3000NZ
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