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FDS3512

80V N-Channel PowerTrench MOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. Features ?4.0A,80VRDS(ON)=70m?@VGS=10VRDS(ON)=80m?@VGS=6V ?Lowgatecharge(

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

GBJ3512

GlassPassivatedSingle-PhaseBridgeRectifier

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

GBJ3512H

GlassPassivatedSingle-PhaseBridgeRectifier

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

GBPC3512

35AGLASSPASSIVATEDSINGLE-PHASEBRIDGERECTIFIER

Features ?GlassPassivatedDieConstruction ?LowReverseLeakageCurrent ?LowPowerLoss,HighEfficiency ?ElectricallyIsolatedEpoxyCaseforMaximumHeatDissipation ?CasetoTerminalIsolationVoltage2500V ?RecognizedFile#E157705

WTEWon-Top Electronics

毅星電子毅星電子股份有限公司

GBPC3512

SINGLEPHASEBRIDGE

Description Arangeofextremelycompact,encapsulatedsinglephasebridgerectifiersofferingefficientandreliableoperation.Theyareintendedforuseingeneralpurposeandinstrumentationapplications. Features ■Universal,3wayterminals:push-on,wraparoundorsolder ■Highthermalc

IRF

International Rectifier

GBPC3512

35AGLASSPASSIVATEDBRIDGERECTIFIER

FEATURES ?ULRecognitionfilenumberE54214 ?Universal3-wayterminals:snap-on,wirewrap-around,orP.C.B.mounting ?TypicalIRlessthan0.3μA ?Highsurgecurrentcapability ?Lowthermalresistance ?SolderDip260°C,40seconds ?ComponentinaccordancetoRoHS2002/95/ECandWEE

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

GBPC3512

35AGLASSPASSIVATEDSINGLE-PHASEBRIDGERECTIFIER

Features ●GlassPassivatedDieConstruction ●LowReverseLeakageCurrent ●LowPowerLoss,HighEfficiency ●ElectricallyIsolatedEpoxyCaseforMaximumHeatDissipation ●CasetoTerminalIsolationVoltage2500V

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

GBPC3512

GlassPassivatedSingle-PhaseBridgeRectifier

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

GBPC3512

35AGLASSPASSIVATEDSINGLEPHASEBRIDGERECTIFIER

GlassPassivatedDieConstruction LowReverseLeakageCurrent LowPowerLoss,HighEfficiency HeatsinkIntegratedEpoxyCasefor MaximumHeatDissipation LowThermalResistance HighSurgeCurrentCapability RecognizedFile#E157705

WTEWon-Top Electronics

毅星電子毅星電子股份有限公司

GBPC3512A

SINGLEPHASEBRIDGE

Description Arangeofextremelycompact,encapsulatedsinglephasebridgerectifiersofferingefficientandreliableoperation.Theyareintendedforuseingeneralpurposeandinstrumentationapplications. Features ■Universal,3wayterminals:push-on,wraparoundorsolder ■Highthermalc

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號：

    FDS3512

  • 功能描述：

    MOSFET SO-8

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

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1400
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更多FDS3512供應(yīng)商 更新時(shí)間2025-3-20 13:47:00

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