FDMA410NZT中文資料安森美半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

Description

This Single N?Channel MOSFET has been designed using

ON Semiconductor’s advanced Power Trench process to optimize the

RDS(on) @ VGS = 1.5 V on special MicroFETTM leadframe.

This design is similar to the FDMA410NZ, however it features our

new advanced 0.55 mm max 2 x 2 MLP package technology.

Features

? 0.55 mm max package height MicroFET 2 x 2 mm Package

? Max RDS(on) = 23 m at VGS = 4.5 V, ID = 9.5 A

? Max RDS(on) = 29 m at VGS = 2.5 V, ID = 8.0 A

? Max RDS(on) = 36 m at VGS = 1.8 V, ID = 4.0 A

? Max RDS(on) = 60 m at VGS = 1.5 V, ID = 2.0 A

? HBM ESD protection level > 1.5 kV (Note 3)

? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant

Typical Applications

? Li?lon Battery Pack

? Baseband Switch

? Load Switch

? DC?DC Conversion

? Mobile Device Switching