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FDI

Inline Fuseholder, 5x20 / 6.3x32 mm

SCHURTERSchurter Inc.

碩特碩特集團(tuán)

FDI

Inline Fuseholder, 5x20 / 6.3x32 mm

SCHURTERSchurter Inc.

碩特碩特集團(tuán)

FDI025N06

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=265A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.5mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchm

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDI030N06

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=136A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.2mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchm

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDI038AN06A0

N-Channel PowerTrench MOSFET 60V, 80A, 3.8m?

Features ?rDS(ON)=3.5m?(Typ.),VGS=10V,ID=80A ?Qg(tot)=95nC(Typ.),VGS=10V ?LowMillerCharge ?LowQRRBodyDiode ?UISCapability(SinglePulseandRepetitivePulse) Applications ?Motor/BodyLoadControl ?ABSSystems ?PowertrainManagement ?InjectionSystems ?DC

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDI038AN06A0

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=17A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.8mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmo

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDI040N06

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=168A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmod

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDI047AN08A0

N-Channel PowerTrench MOSFET 75V, 80A, 4.7m?

Features ?rDS(ON)=4.0m?(Typ.),VGS=10V,ID=80A ?Qg(tot)=92nC(Typ.),VGS=10V ?LowMillerCharge ?LowQRRBodyDiode ?UISCapability(SinglePulseandRepetitivePulse) ?QualifiedtoAECQ101 Applications ?42VAutomotiveLoadControl ?Starter/Altern

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDI047AN08A0

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=75V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.7mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmo

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDI12N50

N-Channel MOSFET 500V, 11.5A, 0.65廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features ?RDS(on)=0.55Ω(Typ.)@VGS=10V,ID=6A ?Lowgatecharge(Typ.22nC) ?LowCrss(Typ.12pF) ?Fastswitching ?100avalan

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號：

    FDI

  • 功能描述：

    MOSFET 60V N-Channel PowerTrench

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
FAIRCHIL
23+
TO-262
9526
詢價(jià)
仙童
06+
TO-262
2500
原裝
 詢價(jià)
Fairchild
23+
TO-262AB
7750
全新原裝優(yōu)勢
 詢價(jià)
FAIRCHILD
24+
TO-262(I2PAK)
8866
詢價(jià)
FAIRCHILD
24+
TO-262
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價(jià)
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
PHI
22+
BGA
2000
進(jìn)口原裝!現(xiàn)貨庫存
 詢價(jià)
PHI
24+
BGA
2140
全新原裝!現(xiàn)貨特價(jià)供應(yīng)
 詢價(jià)
3M
新
5
全新原裝 貨期兩周
 詢價(jià)
FAIRCHI
23+
TO220
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
更多FDI供應(yīng)商 更新時(shí)間2025-3-1 14:00:00

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