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FDD6635

35V N-Channel PowerTrench MOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeenproducedusingFairchildSemiconductor’sproprietaryPowerTrenchtechnologytodeliverlowRdsonandoptimizedBvdsscapabilitytooffersuperiorperformancebenefitintheapplications. Features ?59A,35VRDS(ON)=10mΩ@VGS=10VRDS(ON

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD6635

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=59A@TC=25℃ ·DrainSourceVoltage :VDSS=35V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=10mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FDD6635

N-channel Enhancement Mode Power MOSFET

Features ?VDS=30V,ID=80A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

IRF6635

DirectFETPowerMOSFET

Description TheIRF6635combinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutgeo

IRF

International Rectifier

IRF6635PBF

DirectFETPowerMOSFET

Description TheIRF6635PbFcombinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

IRF6635PBF

CompatiblewithexistingSurfaceMountTechniques

Description TheIRF6635PbFcombinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

IRF6635PBF

IdealforCPUCoreDC-DCConverters

IRF

International Rectifier

IRF6635TRPBF

CompatiblewithexistingSurfaceMountTechniques

Description TheIRF6635PbFcombinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

IRF6635TRPBF

IdealforCPUCoreDC-DCConverters

IRF

International Rectifier

IRF6635TRPBF

DirectFETPowerMOSFET

Description TheIRF6635PbFcombinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    FDD6635

  • 功能描述：

    MOSFET 35V N-Ch PowerTrench MOSFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
FAIRCHILD/仙童
24+
TO252
8950
BOM配單專家,發(fā)貨快,價(jià)格低
 詢價(jià)
onsemi(安森美)
23+
TO-252
9555
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
 詢價(jià)
ON/安森美
24+
TO-252
505348
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價(jià)
FAIRCHILD
23+
TO252
3200
絕對(duì)全新原裝!優(yōu)勢(shì)供貨渠道!特價(jià)!請(qǐng)放心訂購(gòu)!
 詢價(jià)
FAIRCHILD
24+
TO-252
36800
詢價(jià)
FAIRCHIL
23+
TO252
1170
全新原裝
 詢價(jià)
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
ONSemiconductor
24+
NA
3000
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
 詢價(jià)
FAIRCHILD
1816+
TO-252
6523
科恒偉業(yè)!只做原裝正品,假一賠十!
 詢價(jià)
FAIRCHI
23+
TO-252
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
更多FDD6635供應(yīng)商 更新時(shí)間2025-3-5 16:36:00

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