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FDB12N50TM

N-ChannelMOSFET500V,11.5A,0.65廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features ?RDS(on)=0.55Ω(Typ.)@VGS=10V,ID=6A ?Lowgatecharge(Typ.22nC) ?LowCrss(Typ.12pF) ?Fastswitching ?100avalan

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDB12N50TM

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDB12N50TM

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FDB12N50U

N-ChannelMOSFET,FRFET500V,10A,0.8廓

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDB12N50U

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.8Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FDI12N50

N-ChannelMOSFET500V,11.5A,0.65廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features ?RDS(on)=0.55Ω(Typ.)@VGS=10V,ID=6A ?Lowgatecharge(Typ.22nC) ?LowCrss(Typ.12pF) ?Fastswitching ?100avalan

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDI12N50TU

N-ChannelMOSFET500V,11.5A,0.65廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features ?RDS(on)=0.55Ω(Typ.)@VGS=10V,ID=6A ?Lowgatecharge(Typ.22nC) ?LowCrss(Typ.12pF) ?Fastswitching ?100avalan

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDP12N50

N-ChannelMOSFET500V,11.5A,0.65廓

Description UniFETTMMOSFETisFairchildSemiconductor’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.Thisdevicefamilyissuitablef

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDP12N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FDP12N50F

N-ChannelMOSFET500V,11.5A,0.7廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

詳細參數(shù)

  • 型號：

    FDB12N50FTM

  • 制造商：

    Fairchild Semiconductor Corporation

供應商型號品牌批號封裝庫存備注價格
FAIRCHILD/仙童
24+
TO-263
134
只做原廠渠道 可追溯貨源
 詢價
onsemi(安森美)
23+
-
7793
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
FSC
22+23+
TO-263
29044
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
FAIRCHI
18+
TO-263
85600
保證進口原裝可開17%增值稅發(fā)票
 詢價
FAIRCHILD/仙童
23+
TO-263
30000
全新原裝現(xiàn)貨,價格優(yōu)勢
 詢價
FAIRCHILD/仙童
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
F
22+
D2-PAK
6000
十年配單,只做原裝
 詢價
TH/韓國太虹
2048+
TO-263
9851
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
FAIRCHILD/仙童
23+
TO-263
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
FAIRCHILD/仙童
22+新年份
TO-263
50000
原廠渠道/可含稅特價出/誠信經(jīng)營
 詢價
更多FDB12N50FTM供應商 更新時間2025-3-12 15:00:00

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