首頁 >FCQ30B10>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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SchottkyBarrierDiode | NIEC Nihon Inter Electronics Corporation | NIEC | ||
PowerMOSFET | SHINDENGENShindengen Electric Mfg.Co.Ltd 日本新電元工業(yè)株式會社 | SHINDENGEN | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=30mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFETusesadvancedSGTtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER | ||
SchottkyBarrierDiode | NIEC Nihon Inter Electronics Corporation | NIEC | ||
ScokktyBarrierDiode SBD 30AAvg.100Volts | NIEC Nihon Inter Electronics Corporation | NIEC |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
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