| 零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
SINGLE12/10/8-BITVOLTAGE-OUTPUTDACS | ICMICIC MICROSYSTEMS 集成電路微系統(tǒng)公司 | ICMIC | ||
SINGLE12/10/8-BITVOLTAGE-OUTPUTDACS | ICMICIC MICROSYSTEMS 集成電路微系統(tǒng)公司 | ICMIC | ||
SINGLE12/10/8-BITVOLTAGE-OUTPUTDACS | ICMICIC MICROSYSTEMS 集成電路微系統(tǒng)公司 | ICMIC | ||
SINGLE12/10/8-BITVOLTAGE-OUTPUTDACS | ICMICIC MICROSYSTEMS 集成電路微系統(tǒng)公司 | ICMIC | ||
SINGLE12/10/8-BITVOLTAGE-OUTPUTDACS | ICMICIC MICROSYSTEMS 集成電路微系統(tǒng)公司 | ICMIC | ||
SINGLE12/10/8-BITVOLTAGE-OUTPUTDACS | ICMICIC MICROSYSTEMS 集成電路微系統(tǒng)公司 | ICMIC | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
GenerationVTechnology TheSOP-8hasbeenmodifiedthroughacustomized leadframeforenhancedthermalcharacteristicsand multiple-diecapabilitymakingitidealinavarietyof powerapplications.Withtheseimprovements,multiple devicescanbeusedinanapplicationwithdramatically reducedboardspace.Thepa | UMWUMW Rightway Semiconductor Co., Ltd. 友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司(簡稱UMW?) | UMW | ||
MOSFET Description TheSOP-8hasbeenmodifiedthroughacustomized leadframeforenhancedthermalcharacteristicsand multiple-diecapabilitymakingitidealinavarietyof powerapplications.Withtheseimprovements,multiple devicescanbeusedinanapplicationwithdramatically reducedboard | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體 | EVVOSEMI | ||
HEXFET?PowerMOSFET Description TheseHEXFET?PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe | IRF International Rectifier | IRF | ||
HEXFET?PowerMOSFET Description TheseHEXFET?PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
GenerationVTechnology | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieve extremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedand ruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET Description SpecificallydesignedforAutomotiveapplications,theseHEXFET?PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseAutomotivequalifiedHEXFETPowerMOSFET’sarea17 | IRF International Rectifier | IRF | ||
HEXFET?PowerMOSFET Description TheseHEXFET?PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description TheseHEXFET?PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description TheseHEXFET?PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe | IRF International Rectifier | IRF | ||
HEXFET?PowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
GenerationVTechnology TheSOP-8hasbeenmodifiedthroughacustomized leadframeforenhancedthermalcharacteristicsand multiple-diecapabilitymakingitidealinavarietyof powerapplications.Withtheseimprovements,multiple devicescanbeusedinanapplicationwithdramatically reducedboardspace.Thepa | UMWUMW Rightway Semiconductor Co., Ltd. 友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司(簡稱UMW?) | UMW |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
NXP/恩智浦 |
2021+ |
SSOP20 |
100500 |
一級(jí)代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價(jià) | ||
IR場效應(yīng)管 |
24+23+ |
SOP8 |
12580 |
16年現(xiàn)貨庫存供應(yīng)商終端BOM表可配單提供樣品 |
詢價(jià) | ||
IOR |
23+ |
SOP8 |
11005 |
專業(yè)優(yōu)勢供應(yīng) |
詢價(jià) | ||
NA |
24+ |
SOP8 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價(jià) | ||
IR |
22+ |
SOP-8 |
6550 |
絕對(duì)原裝公司現(xiàn)貨! |
詢價(jià) | ||
IR |
SOP8 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
VBsemi |
21+ |
S0P8 |
10065 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
VBsemi |
2229+ |
S0P8 |
5725 |
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價(jià) | ||
IR |
22+ |
SOP-3.9-8P |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | ||
IR |
23+ |
SOP-3.9-8P |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) |
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