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F6617SPK

Marking：6617；Package：CSPB2217-6；Enhancement Mode Power MOSFET

DESCRIPTION TheF6617SPKusesadvancedtrenchtechnologytoprovideexcellentR, lowgatechargeandoperationwithgatevoltagesaslowas2.5Vwhileretaininga12VVrating. ItisESDprotected. Thisdeviceissuitableforuseasaunidirectionalorbi-directionalloadswitch,facilitated

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

FLS6617

Primary-Side-RegulationPWMwithPOWERMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FLS6617MX

Primary-Side-RegulationPWMwithPOWERMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

HM-6617

2Kx8CMOSPROM

Description TheHM-6617isa16,384bitfuselinkCMOSPROMina2Kwordby8-bit/wordformatwith“Three-State”outputs.ThisPROMisavailableinthestandard0.600inchwide24pinSBDIP,the0.300inchwideslimlineSBDIP,andtheJEDECstandard32padCLCC. Features ?LowPowerStandbyand

Intersil

Intersil Corporation

HS-6617RH

RadiationHardened2Kx8CMOSPROM

RadiationHardened2Kx8CMOSPROM TheIntersilHS-6617RHisaradiationhardened16KCMOSPROM,organizedina2Kwordby8-bitformat.ThechipismanufacturedusingaradiationhardenedCMOSprocess,andisdesignedtobefunctionallyequivalenttotheHM-6617.Synchronouscircuitdesigntech

Intersil

Intersil Corporation

HS-6617RH

RadiationHardened2Kx8CMOSPROM

Intersil

Intersil Corporation

HS-6617RH-T

RadiationHardened2Kx8CMOSPROM

Intersil’sSatelliteApplicationsFlowTM(SAF)devicesarefullytestedandguaranteedto100kRADtotaldose.TheseQMLClassTdevicesareprocessedtoastandardflowintendedtomeetthecostandshorterlead-timeneedsoflargevolumesatellitemanufacturers,whilemaintainingahighlevelof

Intersil

Intersil Corporation

IRF6617

HEXFETPowerMOSFET

Description TheIRF6617combinesthelatestHEXFET?PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaMICRO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

IRF6617PBF

IdealforCPUCoreDC-DCConverters

IRF

International Rectifier

IRF6617PBF

Lead-Free(Qualifiedupto260?CReflow)

Description TheIRF6617PbFcombinesthelatestHEXFET?powerMOSFETsilicontechnologywithadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaMicro8?andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutg

IRF

International Rectifier

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IC
1950+
980
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價(jià)
STR
23+
ZIP-5
5000
原裝正品,假一罰十
 詢價(jià)
STR
23+
ZIP-5
36472
##公司主營(yíng)品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
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STR
23+
TO-3P
45000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
ST
24+
TO-3P
200000
原裝進(jìn)口正口,支持樣品
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ST
25+
TO-3P
16900
原裝，請(qǐng)咨詢
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IR
22+
TO220
6000
終端可免費(fèi)供樣,支持BOM配單
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IR
23+
TO220
8000
只做原裝現(xiàn)貨
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IR
23+
TO220
7000
詢價(jià)
TI/TEXAS
23+
WAFER
8931
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更多F6617SPK供應(yīng)商 更新時(shí)間2025-6-9 17:48:00

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