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F101

10 WATTS SINGLE & DUAL OUTPUT DC/DC INDUSTRIAL

POWERBOX

Powerbox manufactures

F101002-ND

Fuse Blocks and Clips - For 3AG Fuses

FuseBlocksandClips-For3AGFuses 3AGScrewTerminalLaminatedBaseType

Littelfuselittelfuse

力特力特公司

F1010E

Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

?AdvancedProcessTechnology ?UltraLowOn-Resistance ?Dynamicdv/dtRating ?175°COperatingTemperature ?FastSwitching ?FullyAvalancheRated Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveex

IRF

International Rectifier

F1010N

Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A??

VDSS=55V RDS(on)=11m? ID=85A? Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRF

International Rectifier

F1010NS

Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A??

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

F1015

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

100WattsGemini PackageStyleAH GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers.

Polyfet

Polyfet RF Devices

F1016

Compact I/O station for DeviceNet test us-english

■Removable5-pinscrew-clampterminal block,forDeviceNetfieldbusconnection ■RotarycodingswitchforsettingtheDeviceNet?address ■16Kan?leDI ■16konfigurierbareKan?le,DIoderDO ■24VDC ■minusschaltend ■Ausgangsstrom:0.5A ■ProtectionclassIP20

TURCKTurck Inc.

圖爾克德國圖爾克集團(tuán)公司

F1018

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers.

Polyfet

Polyfet RF Devices

F1012

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

Polyfet

Polyfet RF Devices

F1012

Micro Flow Sensor

WINSENZhengzhou Winsen Electronics Technology Co., Ltd.

煒盛電子鄭州煒盛電子科技有限公司

F1013

Micro Flow Sensor

WINSENZhengzhou Winsen Electronics Technology Co., Ltd.

煒盛電子鄭州煒盛電子科技有限公司

F1014

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

Polyfet

Polyfet RF Devices

F1015

ATO Blade Fuse Rated 32V

Littelfuselittelfuse

力特力特公司

F1015-ND

ATO Blade Fuse Rated 32V

Littelfuselittelfuse

力特力特公司

F1016

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

Polyfet

Polyfet RF Devices

F1016

ATO Blade Fuse Rated 32V

Littelfuselittelfuse

力特力特公司

F1016-ND

ATO Blade Fuse Rated 32V

Littelfuselittelfuse

力特力特公司

F1017

ATO Blade Fuse Rated 32V

Littelfuselittelfuse

力特力特公司

F1017-ND

ATO Blade Fuse Rated 32V

Littelfuselittelfuse

力特力特公司

F1018

ATO Blade Fuse Rated 32V

Littelfuselittelfuse

力特力特公司

詳細(xì)參數(shù)

  • 型號：

    F101

  • 制造商：

    Pentair Technical Products/Hoffman

  • 功能描述：

    Basic Galvized 3R Trough

供應(yīng)商型號品牌批號封裝庫存備注價格
NEC
16+
CAN3
1550
原裝現(xiàn)貨假一罰十
 詢價
FUJITSU
24+
DIP-8
250
詢價
NEC
專業(yè)鐵帽
CAN3
1550
原裝鐵帽專營,代理渠道量大可訂貨
 詢價
NEC
專業(yè)鐵帽
CAN3
67500
鐵帽原裝主營-可開原型號增稅票
 詢價
FUJI
22+
DIP
8000
原裝正品支持實(shí)單
 詢價
12+
TO-263
15000
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
 詢價
FAI
23+
DIP/16/磁
7000
絕對全新原裝!100%保質(zhì)量特價!請放心訂購!
 詢價
NEC
23+
原廠封裝
8293
詢價
IR
23+
TO-263
9500
專業(yè)優(yōu)勢供應(yīng)
 詢價
原廠
23+
DIP16
5000
原裝正品,假一罰十
 詢價
更多F101供應(yīng)商 更新時間2024-12-24 13:30:00

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