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FG055

GAUSSIANFILTERS

FaradayFaraday Technology

智原科技智原科技股份有限公司

FSF055D

25A,60V,0.020Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSF055R

25A,60V,0.020Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSJ055D

70A,60V,0.012Ohm,RadiationHardened,SEGRResistant,N-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

Intersil

Intersil Corporation

FSJ055R

70A,60V,0.012Ohm,RadiationHardened,SEGRResistant,N-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

Intersil

Intersil Corporation

FSYC055D

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscom

Intersil

Intersil Corporation

FSYC055R

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscom

Intersil

Intersil Corporation

FVDB-055B

ThrrePhaseDoubleStageFilterforInvertersandPowerDrives

PREMOPREMO CORPORATION S.L

普萊默

FVDB-055BHV

ThrrePhaseDoubleStageFilterforInvertersandPowerDrives

PREMOPREMO CORPORATION S.L

普萊默

FVDT-055B

ThreePhaseDoubleStage

PREMOPREMO CORPORATION S.L

普萊默

詳細(xì)參數(shù)

  • 型號(hào)：

    F-055-C

  • 制造商：

    GC Electronics

  • 功能描述：

    Screws Sheet Metal Steel Hex Washer Head Slot Drive

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IDT/RENESAS
22+
VFQFPN
24500
瑞薩全系列在售
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IDT,
20+
-
1128
無(wú)線通信IC,大量現(xiàn)貨!
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IDT
1931+
N/A
163
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IDT
20+
射頻元件
155
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
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IDT
21+
QFN68
5000
全新原裝現(xiàn)貨 價(jià)格優(yōu)勢(shì)
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IDT
23+
QFN68
50000
全新原裝正品現(xiàn)貨,支持訂貨
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IDT
22+
NA
163
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IDT
22+
QFN68
6200
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IDT
22+
9000
原廠渠道,現(xiàn)貨配單
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IDT
21+
13880
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更多F-055-C供應(yīng)商 更新時(shí)間2025-1-26 11:00:00

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