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EVAL_1ED020I12-B2中文資料英飛凌數(shù)據(jù)手冊PDF規(guī)格書

EVAL_1ED020I12-B2
廠商型號

EVAL_1ED020I12-B2

功能描述

High voltage gate driver IC

文件大小

1.07311 Mbytes

頁面數(shù)量

20

生產(chǎn)廠商 Infineon Technologies AG
企業(yè)簡稱

INFINEON英飛凌

中文名稱

英飛凌科技股份公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-7-22 15:01:00

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EVAL_1ED020I12-B2規(guī)格書詳情

The EVAL_1ED020I12-B2 contains two IGBT gate drivers 1ED020I12-B2 in a half bridge

configuration and an IGBT module FS25R12W1T4_B11 where only two IGBTs are connected.

The evaluation board provides the following main features

? Galvanic isolation by the coreless transformer technology of the Infineon gate driver. The gate

1ED020I12-B2 is suitable for basic isolation

? Isolation inside the half bridge by defined creepage

? Short circuit protection

? Under voltage lock out

? Active miller clamp

? Bootstrap functionality for high side IGBT

? Connector for 5V digital supply, 15V supply, Reset, High voltage supply, external load

? Status LED for 5V supply, 15V supply, ready and fault separated for high- and lowside driver

? DC link capacitor

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
INFINEON
23+
8000
只做原裝現(xiàn)貨
詢價
INFINEON
23+
GOOP
7000
詢價