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IRFR9010

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancheratings ?Surface-mount(IRFR9010,SiHFR9010) ?Straightlead(IRFU9010,SiHFU9010) ?Simpledriverequirements ?Easeofparalleling ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCR

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9010PBF

PowerMOSFET

DESCRIPTION ThepowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9010PBF

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancheratings ?Surface-mount(IRFR9010,SiHFR9010) ?Straightlead(IRFU9010,SiHFU9010) ?Simpledriverequirements ?Easeofparalleling ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCR

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9010TRLPBFA

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancheratings ?Surface-mount(IRFR9010,SiHFR9010) ?Straightlead(IRFU9010,SiHFU9010) ?Simpledriverequirements ?Easeofparalleling ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCR

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9010TRPBF

P-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

IRFR9010TRPBFA

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancheratings ?Surface-mount(IRFR9010,SiHFR9010) ?Straightlead(IRFU9010,SiHFU9010) ?Simpledriverequirements ?Easeofparalleling ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCR

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU9010

P-CHANNELPOWERMOSFETS

FEATURES ?LowerRDS(ON) ?Improvedinductiveruggedness ?Fastswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowerinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFU9010

PowerMOSFET

DESCRIPTION ThepowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU9010

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFU9010

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancheratings ?Surface-mount(IRFR9010,SiHFR9010) ?Straightlead(IRFU9010,SiHFU9010) ?Simpledriverequirements ?Easeofparalleling ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCR

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    EVAL-ADF9010EBZ

  • 制造商：

    AD

  • 制造商全稱：

    Analog Devices

  • 功能描述：

    900 MHz ISM Band Analog RF Front End

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ADI/亞德諾
25+
20000
原裝現(xiàn)貨,可追溯原廠渠道
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ADI/亞德諾
23+
EB/PCB
3000
只做原裝正品,假一賠十
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ADI
3
只做正品
 詢價(jià)
24+
N/A
62000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
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ANALOG DEVICES
24+
con
4000
優(yōu)勢(shì)庫(kù)存,原裝正品
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ADI/亞德諾
20+
EvaluationBoard
33680
ADI全新原裝-可開原型號(hào)增稅票
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AD
1824+
NA
16
加我QQ或微信咨詢更多詳細(xì)信息,
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Analog Devices
23+
1500
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ADI/亞德諾
22+
66900
原封裝
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ADI/亞德諾
25+
原封裝
8800
公司只做原裝,詳情請(qǐng)咨詢
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更多EVAL-ADF9010EBZ供應(yīng)商 更新時(shí)間2025-5-28 10:03:00

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