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ER5810RJT

包裝:散裝 封裝/外殼:軸向 類別:電阻器 通孔式電阻器 描述:RES 10 OHM 5% 7W AXIAL

TE Connectivity Passive Product

TE Connectivity Passive Product

TE Connectivity Passive Product

FDD5810

N-ChannelPowerTrench?MOSFET60V,35A,27mOhm

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD5810

N-ChannelLogicLevelTrench?MOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD5810

N-ChannelLogicLevelTrenchMOSFET60V,36A,27m

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD5810

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDD5810

N-channelEnhancementModePowerMOSFET

Features ?VDS=60V,ID=30A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

HI5810

CMOS10Microsecond,12-Bit,SamplingA/DConverterwithInternalTrackandHold

TheHI5810isafast,lowpower,12-bit,successive-approximation,analog-to-digitalconverter.Itcanoperatefromasingle3Vto6Vsupplyandtypicallydrawsjust1.9mAwhenoperatingat5V.TheHI5810featuresabuilt-intrackandhold.Theconversiontimeisaslowas10μswitha5Vsupply.

Intersil

Intersil Corporation

HI5810

CMOS10Microsecond,12-Bit,SamplingA/DConverterwithInternalTrackandHold

Description TheHI5810isafast,lowpower,12-bit,successiveapproximation,analog-to-digitalconverter.Itcanoperatefromasingle3Vto6Vsupplyandtypicallydrawsjust1.9mAwhenoperatingat5V.TheHI5810featuresabuilt-intrackandhold.Theconversiontimeisaslowas10μswitha

Intersil

Intersil Corporation

HI5810JIB

CMOS10Microsecond,12-Bit,SamplingA/DConverterwithInternalTrackandHold

Description TheHI5810isafast,lowpower,12-bit,successiveapproximation,analog-to-digitalconverter.Itcanoperatefromasingle3Vto6Vsupplyandtypicallydrawsjust1.9mAwhenoperatingat5V.TheHI5810featuresabuilt-intrackandhold.Theconversiontimeisaslowas10μswitha

Intersil

Intersil Corporation

HI5810JIB-T

CMOS10Microsecond,12-Bit,SamplingA/DConverterwithInternalTrackandHold

TheHI5810isafast,lowpower,12-bit,successive-approximation,analog-to-digitalconverter.Itcanoperatefromasingle3Vto6Vsupplyandtypicallydrawsjust1.9mAwhenoperatingat5V.TheHI5810featuresabuilt-intrackandhold.Theconversiontimeisaslowas10μswitha5Vsupply.

Intersil

Intersil Corporation

HI5810JIJ

CMOS10Microsecond,12-Bit,SamplingA/DConverterwithInternalTrackandHold

Description TheHI5810isafast,lowpower,12-bit,successiveapproximation,analog-to-digitalconverter.Itcanoperatefromasingle3Vto6Vsupplyandtypicallydrawsjust1.9mAwhenoperatingat5V.TheHI5810featuresabuilt-intrackandhold.Theconversiontimeisaslowas10μswitha

Intersil

Intersil Corporation

HI5810JIP

CMOS10Microsecond,12-Bit,SamplingA/DConverterwithInternalTrackandHold

Description TheHI5810isafast,lowpower,12-bit,successiveapproximation,analog-to-digitalconverter.Itcanoperatefromasingle3Vto6Vsupplyandtypicallydrawsjust1.9mAwhenoperatingat5V.TheHI5810featuresabuilt-intrackandhold.Theconversiontimeisaslowas10μswitha

Intersil

Intersil Corporation

HI5810KIB

CMOS10Microsecond,12-Bit,SamplingA/DConverterwithInternalTrackandHold

Description TheHI5810isafast,lowpower,12-bit,successiveapproximation,analog-to-digitalconverter.Itcanoperatefromasingle3Vto6Vsupplyandtypicallydrawsjust1.9mAwhenoperatingat5V.TheHI5810featuresabuilt-intrackandhold.Theconversiontimeisaslowas10μswitha

Intersil

Intersil Corporation

HI5810KIJ

CMOS10Microsecond,12-Bit,SamplingA/DConverterwithInternalTrackandHold

Description TheHI5810isafast,lowpower,12-bit,successiveapproximation,analog-to-digitalconverter.Itcanoperatefromasingle3Vto6Vsupplyandtypicallydrawsjust1.9mAwhenoperatingat5V.TheHI5810featuresabuilt-intrackandhold.Theconversiontimeisaslowas10μswitha

Intersil

Intersil Corporation

HI5810KIP

CMOS10Microsecond,12-Bit,SamplingA/DConverterwithInternalTrackandHold

Description TheHI5810isafast,lowpower,12-bit,successiveapproximation,analog-to-digitalconverter.Itcanoperatefromasingle3Vto6Vsupplyandtypicallydrawsjust1.9mAwhenoperatingat5V.TheHI5810featuresabuilt-intrackandhold.Theconversiontimeisaslowas10μswitha

Intersil

Intersil Corporation

IRF5810

PowerMOSFET(Vdss=-20V)

Description TheseP-channelHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplicati

IRF

International Rectifier

IRF5810PBF

UltraLowOn-Resistance

IRF

International Rectifier

IRF5810TRPBF

UltraLowOn-Resistance

IRF

International Rectifier

LP5810

LP5813SynchronousBoost4×3MatrixRGBLEDDriverWithAutonomousControl

1Features ?Operatingvoltagerange: –Inputvoltage(VIN)range:0.5Vto5.5V –1.8-Vminimuminputvoltageforstart-up –Logicpinscompatiblewith1.8V,3.3V,and5V ?Highefficiencysynchronousboostconverter –Outputvoltage(VOUT)range:3Vto5.5V –140-mΩ(HS)/60-mΩ(LS

TITexas Instruments

德州儀器美國德州儀器公司

LP5810ADSDR

LP5813SynchronousBoost4×3MatrixRGBLEDDriverWithAutonomousControl

1Features ?Operatingvoltagerange: –Inputvoltage(VIN)range:0.5Vto5.5V –1.8-Vminimuminputvoltageforstart-up –Logicpinscompatiblewith1.8V,3.3V,and5V ?Highefficiencysynchronousboostconverter –Outputvoltage(VOUT)range:3Vto5.5V –140-mΩ(HS)/60-mΩ(LS

TITexas Instruments

德州儀器美國德州儀器公司

產(chǎn)品屬性

  • 產(chǎn)品編號:

    ER5810RJT

  • 制造商:

    TE Connectivity Passive Product

  • 類別:

    電阻器 > 通孔式電阻器

  • 系列:

    ER, CGS

  • 包裝:

    散裝

  • 容差:

    ±5%

  • 功率 (W):

    7W

  • 成分:

    繞線

  • 溫度系數(shù):

    0/ +60ppm/°C

  • 工作溫度:

    -55°C ~ 200°C

  • 封裝/外殼:

    軸向

  • 供應(yīng)商器件封裝:

    軸向

  • 大小 / 尺寸:

    0.315" 直徑 x 0.874" 長(8.00mm x 22.20mm)

  • 描述:

    RES 10 OHM 5% 7W AXIAL

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更多ER5810RJT供應(yīng)商 更新時(shí)間2025-1-13 8:24:00