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EL7154CSZ-T13集成電路(IC)的柵極驅(qū)動(dòng)器規(guī)格書(shū)PDF中文資料

EL7154CSZ-T13
廠(chǎng)商型號(hào)

EL7154CSZ-T13

參數(shù)屬性

EL7154CSZ-T13 封裝/外殼為8-SOIC(0.154",3.90mm 寬);包裝為管件;類(lèi)別為集成電路(IC)的柵極驅(qū)動(dòng)器;產(chǎn)品描述:IC GATE DRVR HI/LOW SIDE 8SOIC

功能描述

High Speed, Monolithic Pin Driver

封裝外殼

8-SOIC(0.154",3.90mm 寬)

文件大小

278.66 Kbytes

頁(yè)面數(shù)量

8 頁(yè)

生產(chǎn)廠(chǎng)商 Intersil Corporation
企業(yè)簡(jiǎn)稱(chēng)

Intersil

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更新時(shí)間

2025-2-16 16:41:00

EL7154CSZ-T13規(guī)格書(shū)詳情

The EL7154 three-state pin driver is particularly well suited

for ATE and level shifting applications. The 4A peak drive

capability, makes the EL7154 an excellent choice when

driving high speed capacitive lines.

The P-Channel MOSFET is completely isolated from the

power supply, providing a high degree of flexibility. Pin (7)

can be grounded, and the output can be taken from pin (8)

when a “source follower” output is desired. The N-Channel

MOSFET has an isolated drain, but shares a common bus

with pre-drivers and level shifter circuits. This is necessary to

ensure that the N-Channel device can turn off effectively

when VL goes below GND. In some power-FET and IGBT

applications, negative drive is desirable to insure effective

turn-off. The EL7154 can be used in these applications by

returning VL to a moderate negative potential.

Features

? Comparatively low cost

? Three-State output

? 3V and 5V Input compatible

? Clocking speeds up to 10MHz

? 20ns Switching/delay time

? 4A Peak drive

? Isolated drains

? Low output impedance: 2.5Ω

? Low quiescent current: 5mA

? Wide operating voltage: 4.5V to16V

? Isolated P-Channel device

? Separate ground and VL pins

? Pb-free available (RoHS compliant)

Applications

? Loaded circuit board testers

? Digital testers

? Level shifting below GND

? IGBT drivers

? CCD drivers

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    EL7154CSZ-T13

  • 制造商:

    Renesas Electronics America Inc

  • 類(lèi)別:

    集成電路(IC) > 柵極驅(qū)動(dòng)器

  • 包裝:

    管件

  • 驅(qū)動(dòng)配置:

    高壓側(cè)或低壓側(cè)

  • 通道類(lèi)型:

    同步

  • 柵極類(lèi)型:

    IGBT,N 溝道 MOSFET

  • 電壓 - 供電:

    4.5V ~ 16V

  • 邏輯電壓?- VIL,VIH:

    0.6V,2.4V

  • 電流 - 峰值輸出(灌入,拉出):

    4A,4A

  • 輸入類(lèi)型:

    非反相

  • 上升/下降時(shí)間(典型值):

    4ns,4ns

  • 工作溫度:

    -40°C ~ 125°C(TJ)

  • 安裝類(lèi)型:

    表面貼裝型

  • 封裝/外殼:

    8-SOIC(0.154",3.90mm 寬)

  • 供應(yīng)商器件封裝:

    8-SOIC

  • 描述:

    IC GATE DRVR HI/LOW SIDE 8SOIC

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