Description

With the performance advantages of a Silicon Carbide (SiC)

Schottky Barrier diode, power electronics systems can expect

to meet higher efficiency standards than Si-based solutions,

while also reaching higher frequencies and power densities.

SiC diodes can be easily paralleled to meet various application

demands, without concern of thermal runaway. In combination

with the reduced cooling requirements and improved thermal

performance of SiC products, SiC diodes are able to provide

lower overall system costs in a variety of diverse applications.

Features

? Low Forward Voltage (VF

) Drop with Positive

Temperature Coefficient

? Zero Reverse Recovery Current / Forward

Recovery Voltage

? Temperature-Independent Switching Behavior

? AEC-Q101 + HV-H3TRB Qualified, PPAP Capable

Applications

? Bootstrap Diode

? Boost Diodes in PFC

? Automotive Power Converstion

? PV Inverters

? Outdoor Power Conversion

E4D02120E屬于分立半導(dǎo)體產(chǎn)品 > 二極管 - 整流器 - 單。WOLFSPEED, INC.制造生產(chǎn)的E4D02120E二極管 - 整流器 - 單單整流器二極管系列產(chǎn)品可用于讓電流僅沿一個(gè)方向流動(dòng)，并且每個(gè)器件封裝都恰好實(shí)現(xiàn)該功能的一個(gè)實(shí)例。其他用途的二極管（包括齊納二極管和可變電容二極管）單獨(dú)列在各自的產(chǎn)品系列中，每個(gè)器件封裝中包含多個(gè)二極管的產(chǎn)品也是如此。