首頁(yè) >E25B1>規(guī)格書(shū)列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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TRANSILARRAYFORESDPROTECTION DESCRIPTION TheESDA25B1isamonolithicvoltagesuppressordesignedtoprotectcomponentswhichareconnectedtodataandtransmissionlinesagainstEDS. FEATURES ■6BIDIRECTIONALTRANSIL?FUNCTIONS ■VERYLOWCAPACITANCE:C=20pF@VRM ■150Wpeakpulsepower(8/20μs) APPLICATIONS | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
TRANSILARRAYFORESDPROTECTION DESCRIPTION TheESDA25B1isamonolithicvoltagesuppressordesignedtoprotectcomponentswhichareconnectedtodataandtransmissionlinesagainstEDS. FEATURES ■6BIDIRECTIONALTRANSIL?FUNCTIONS ■VERYLOWCAPACITANCE:C=20pF@VRM ■150Wpeakpulsepower(8/20μs) APPLICATIONS | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
BIDIRECTIONALTRANSILARRAYFORDATALINEPROTECTION Description Transildiodearraysprovidehighovervoltageprotectionbyclampingaction.TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOStechnologyandlowvoltagesuppliedIC’s. Features ■Highsurgecapabil | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
BIDIRECTIONALTRANSILTMARRAYFORDATALINEPROTECTION Description Transildiodearraysprovidehighovervoltageprotectionbyclampingaction.TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOStechnologyandlowvoltagesuppliedIC’s. Features ■Highsurgecapabil | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
BidirectionalTransil??arrayfordatalineprotection | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
BidirectionalTransil??arrayfordatalineprotection | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
BIDIRECTIONALTRANSILARRAYFORDATALINEPROTECTION Description Transildiodearraysprovidehighovervoltageprotectionbyclampingaction.TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOStechnologyandlowvoltagesuppliedIC’s. Features ■Highsurgecapabil | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
BIDIRECTIONALTRANSILTMARRAYFORDATALINEPROTECTION Description Transildiodearraysprovidehighovervoltageprotectionbyclampingaction.TheirinstantaneousresponsetotransientovervoltagesmakesthemparticularlysuitedtoprotectvoltagesensitivedevicessuchasMOStechnologyandlowvoltagesuppliedIC’s. Features ■Highsurgecapabil | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
PowerTransducerSeriesL-UNIT | MSYSTEMM-System Co.,Ltd. 愛(ài)模愛(ài)模系統(tǒng)有限公司 | MSYSTEM | ||
PowerTransducerSeriesL-UNIT | MSYSTEMM-System Co.,Ltd. 愛(ài)模愛(ài)模系統(tǒng)有限公司 | MSYSTEM |
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