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DW2222B

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DW2222IR

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DXT2222A

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

Description Designedforgeneralpurposeamplifierandhigh-speed,medium-powerswitchingapplications.

DCCOM

Dc Components

DXT2222A

NPNSURFACEMOUNTTRANSISTOR

Features ?BVCEO>40V ?IC=600mAHighCollectorCurrent ?ComplementaryPNPType:DXT2907A ?IdealforMediumPowerSwitchingorAmplificationApplications ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?Qualifiedto

DIODES

Diodes Incorporated

DZT2222A

NPNSURFACEMOUNTTRANSISTOR

Features ?EpitaxialPlanarDieConstruction ?ComplementaryPNPTypeAvailable(DZT2907A) ?IdeallySuitedforAutomatedAssemblyProcesses ?IdealforMediumPowerSwitchingorAmplificationApplications ?LeadFreeByDesign/RoHSCompliant(Note1) ?GreenDevice(Note2)

DIODES

Diodes Incorporated

ECQB2222MF

PlasticFilmCapacitors

PanasonicPanasonic Semiconductor

松下松下電器

ECQ-M2222KZ

PolyesterFilmCapacitor

PanasonicPanasonic Semiconductor

松下松下電器

ENA2222

5:1MicroUSBSwitch

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FFB2222A

NPNMulti-ChipGeneralPurposeAmplifier

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FFB2222A

NPNMulti-ChipGeneralPurposeAmplifier

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FFB2222AD

DualGeneralPurposeSwitchingTransistors

FS

First Silicon Co., Ltd

FJX2222A

GeneralPurposeTransistor

Features ?GeneralPurposeTransistor ?Collector-EmitterVoltage:VCEO=40V ?CollectorDissipation:PC(max)=325mW

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FJX2222A

NPNEpitaxialSiliconTransistor

Features ?General-PurposeTransistor ?Collector-EmitterVoltage:VCEO=40V

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FJX2222ATF

NPNEpitaxialSiliconTransistor

Features ?General-PurposeTransistor ?Collector-EmitterVoltage:VCEO=40V

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FMB2222A

NPNMulti-ChipGeneralPurposeAmplifier

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FMB2222A

NPNMulti-ChipGeneralPurposeAmplifier

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FMBT2222

600mASiliconNPNEpitaxialPlanarTransistor

600mASiliconNPNEpitaxialPlanarTransistor Features ?Highcollector-emitterbreakdienvoltage. (BVCEO=40V@IC=10mA) ?Smallloadswitchtransistorwithhighgainandlow staurationvoltage,isdesignedforgeneralpurpose amflifierandswitchingapplicationsatcollectorcurren

FORMOSAFormosa MS

美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司

FMBT2222A

SMDNPNTransistor

600mASiliconNPNEpitaxialPlanarTransistor Features ?Highcollector-emitterbreakdienvoltage. (BVCEO=40V@IC=10mA) ?Smallloadswitchtransistorwithhighgainandlow staurationvoltage,isdesignedforgeneralpurpose amflifierandswitchingapplicationsatcollectorcurren

FORMOSAFormosa MS

美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司

FMBT2222A

FMBT2222ANPNBipolarTransistorEpitaxialplanardieconstruction

FEATURES ?Epitaxialplanardieconstruction ?ComplementaryPNPTypeavailable(FMMBT2907A) MARKING:1P MAXIMUMRATINGS*TA=25℃unlessotherwisenoted

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

FMBT2222A

600mASiliconNPNEpitaxialPlanarTransistor

600mASiliconNPNEpitaxialPlanarTransistor Features ?Highcollector-emitterbreakdienvoltage. (BVCEO=40V@IC=10mA) ?Smallloadswitchtransistorwithhighgainandlow staurationvoltage,isdesignedforgeneralpurpose amflifierandswitchingapplicationsatcollectorcurren

FORMOSAFormosa MS

美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司

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更多DW2222B供應(yīng)商 更新時(shí)間2025-1-1 9:36:00