首頁(yè) >DTU80P03>規(guī)格書(shū)列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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P??hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS‐30V RDSON(MAX.)80mΩ ID‐3.5A Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
P??hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS‐30V RDSON(MAX.)85mΩ ID‐3.6A Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
P??hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS‐30V RDSON(MAX.)85mΩ ID‐3.6A Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
P??hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS‐30V RDSON(MAX.)85mΩ ID‐3.6A Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
P-ChannelEnhancementModePowerMOSFET Description TheG80P03Kusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters | GOFORDGOFORD SEMICONDUCTOR 谷峰半導(dǎo)體 | GOFORD | ||
P-CHANNELENHANCEMENTMODEPOWERMOSFET ●GeneralDescription TheTF80P03combinesadvancedtrenchMOSFET technologywithalowresistancepackagetoprovide extremelylowRDSON.Thisdeviceisidealforloadswitch andbatteryprotectionapplications. ●Features AdvancehighcelldensityTrenchtechnology LowRDS(ON)tominimi | TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓鋒半導(dǎo)體深圳市拓鋒半導(dǎo)體科技有限公司 | TUOFENG | ||
P-ChMOSFET | WIINSOKShenzhen Guan Hua Wei Ye Co., Ltd 微碩半導(dǎo)體微碩半導(dǎo)體（深圳）有限公司 | WIINSOK |
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