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DTP4N60

Power MOSFET Reduced Gate Drive Requirement

DINTEK

DinTek Semiconductor Co,.Ltd

DTP4N60

Reduced Gate Drive Requirement

DINTEK

DinTek Semiconductor Co,.Ltd

DTP4N60_13

Power MOSFET Reduced Gate Drive Requirement

DINTEK

DinTek Semiconductor Co,.Ltd

DTP4N60F

Power MOSFET Reduced Gate Drive Requirement

DINTEK

DinTek Semiconductor Co,.Ltd

DTU4N60

PowerMOSFETReducedGateDriveRequirement

DINTEK

DinTek Semiconductor Co,.Ltd

DTU4N60

ReducedGateDriveRequirement

DINTEK

DinTek Semiconductor Co,.Ltd

DTU4N60

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

ET4N60

600V,4A,N-ChannelPowerMOSFET

ESTEKEstek Electronics Co. Ltd

伊泰克電子北京伊泰克電子有限公司

FCD4N60

600VN-ChannelMOSFET

Description SuperFETTMis,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,pro

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCD4N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FCD4N60TF

600VN-ChannelMOSFET

Description SuperFETTMis,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,pro

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCD4N60TM

600VN-ChannelMOSFET

Description SuperFETTMis,Farichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Thisadvancedtechnologyhasbeentailoredtominimizeconductionloss,pro

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCD4N60TM

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCP4N60

600VN-ChannelMOSFET

Description SuperFET?MOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowonresistanceandlowergatechargeperformance.Thistechnologyistailoredtominimizeconductionloss,pr

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCP4N60

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCP4N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3.9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDD4N60NZ

FDD4N60NZN-ChannelUniFETTMIIMOSFET600V,3.4A,2.5?

Description UniFET?IIMOSFETisFairchildSemiconductor?’shighvoltageMOSFETfamilybasedonadvancedplanarstripeandDMOStechnology.ThisadvancedMOSFETfamilyhasthesmalleston-stateresistanceamongtheplanarMOSFET,andalsoprovidessuperiorswitchingperformanceandhigheravalanc

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD4N60NZ

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.4A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.5Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDP4N60NZ

N-ChannelMOSFET600V,3.8A,2.5廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP4N60NZ

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=3.8A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
DIN-TEK
2022+
TO-220
50000
原廠代理 終端免費提供樣品
 詢價
DIN-TEK
2022+
TO-220
30000
進口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價
D
23+
TO-220
10000
公司只做原裝正品
 詢價
D
24+
TO-TO-220
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
DIN-TEK
23+
TO-220
79999
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
TE
22+
N/A
51800
優(yōu)勢價格原裝現(xiàn)貨提供BOM一站式配單服務(wù)
 詢價
TE/泰科
2405+
n/a
9845
十年芯路!誠信贏客戶!合作創(chuàng)未來!
 詢價
TE
24+
con
100
現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價格https://www.jbchip.com/index
 詢價
TE/泰科
2420+
/
343380
一級代理,原裝正品!
 詢價
TE Connectivity
2306+
NA
6680
原裝正品公司現(xiàn)貨,實單來談
 詢價
更多DTP4N60供應(yīng)商 更新時間2024-10-26 14:02:00

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