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DS_K7A803600B中文資料三星數(shù)據(jù)手冊PDF規(guī)格書

DS_K7A803600B
廠商型號

DS_K7A803600B

功能描述

256Kx36 & 512Kx18 Synchronous SRAM

文件大小

401.61 Kbytes

頁面數(shù)量

18

生產(chǎn)廠商 Samsung semiconductor
企業(yè)簡稱

Samsung三星

中文名稱

三星半導(dǎo)體官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-14 17:43:00

DS_K7A803600B規(guī)格書詳情

GENERAL DESCRIPTION

The K7A803600B and K7A801800B are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.

FEATURES

? Synchronous Operation.

? 2 Stage Pipelined operation with 4 Burst.

? On-Chip Address Counter.

? Self-Timed Write Cycle.

? On-Chip Address and Control Registers.

? 3.3V+0.165V/-0.165V Power Supply.

? I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O

? 5V Tolerant Inputs Except I/O Pins.

? Byte Writable Function.

? Global Write Enable Controls a full bus-width write.

? Power Down State via ZZ Signal.

? LBO Pin allows a choice of either a interleaved burst or a linear burst.

? Three Chip Enables for simple depth expansion with No Data Contention only for TQFP ; 2cycle Enable, 1cycle Disable.

? Asynchronous Output Enable Control.

? ADSP, ADSC, ADV Burst Control Pins.

? TTL-Level Three-State Output.

? 100-TQFP-1420A

? Operating in commeical and industrial temperature range.

產(chǎn)品屬性

  • 型號:

    DS_K7A803600B

  • 制造商:

    SAMSUNG

  • 制造商全稱:

    Samsung semiconductor

  • 功能描述:

    256Kx36 & 512Kx18 Synchronous SRAM

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價(jià)格
MICROCHIP/微芯
22+
N/A
8000
現(xiàn)貨,原廠原裝假一罰十!
詢價(jià)
FOXCONN
RS232 公頭一排腳 貼片 超薄
70742
一級代理百分百有貨,原裝正品現(xiàn)貨,支持實(shí)單!
詢價(jià)
24+
DIP3
2987
只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電!
詢價(jià)
MICROCHIP/微芯
22+
sopdipqfp
9000
原裝正品
詢價(jià)
NS
24+
DIP-8
3500
原裝現(xiàn)貨,可開13%稅票
詢價(jià)
N/A
25+
DIP3
2500
強(qiáng)調(diào)現(xiàn)貨,隨時(shí)查詢!
詢價(jià)
NS
23+
NA
12000
全新原裝假一賠十
詢價(jià)
DEUTSCH
24+
35200
一級代理/放心采購
詢價(jià)
NS
23+
CDIP
9823
詢價(jià)
NS
200
專營CAN鐵帽CDIP
詢價(jià)