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DRV8106-Q1

具有離線診斷功能和直列式電流感應(yīng)放大器的汽車類 40V 半橋智能柵極驅(qū)動器。; ? AEC-Q100 qualified for automotive applications: \n? Temperature grade 1: –40°C to +125°C, TA \n \n? Half-bridge smart gate driver \n? 4.9-V to 37-V (40-V abs. max) operating range\n? Doubler charge pump for 100% PWM\n \n? Pin to pin gate driver variants \n? DRV8705-Q1: H-bridge with low-side amplifier\n? DRV8706-Q1: H-bridge with inline amplifier\n \n? Smart gate drive architecture \n? Adjustable slew rate control\n? 0.5-mA to 62-mA peak source current output\n? 0.5-mA to 62-mA peak sink current output\n? Integrated dead-time handshaking\n \n? Wide common mode current shunt amplifier \n? Supports inline, high-side, or low-side\n? Adjustable gain settings (10, 20, 40, 80 V/V)\n? Integrated feedback resistors\n? Adjustable PWM blanking scheme\n \n? Multiple interface options available \n? SPI: Detailed configuration and diagnostics\n? H/W: Simplified control and less MCU pins\n \n? Spread spectrum clocking for EMI reduction\n? Compact VQFN package with wettable flanks\n? Integrated protection features \n? Dedicated driver disable pin (DRVOFF)\n? Supply and regulator voltage monitors\n? MOSFET VDS overcurrent monitors\n? MOSFET VGS gate fault monitors\n? Charge pump for reverse polarity MOSFET\n? Offline open load and short circuit diagnostics\n? Device thermal warning and shutdown\n? Fault condition interrupt pin (nFAULT);

The DRV8106-Q1 is a highly integrated half-bridge gate driver, capable of driving high-side and low-side N-channel power MOSFETs. It generates the proper gate drive voltages using an integrated doubler charge pump for the high-side and a linear regulator for the low-side.\n\nThe device uses a smart gate drive architecture to reduce system cost and improve reliability. The gate driver optimizes dead time to avoid shoot-through conditions, provides control to decreasing electromagnetic interference (EMI) through adjustable gate drive current, and protects against drain to source and gate short conditions with VDS and VGS monitors.\n\nA wide common mode shunt amplifier provides inline current sensing to continuously measure motor current even during recirculating windows. The amplifier can be used in low-side or high-side sense configurations if inline sensing is not required.\n\nThe DRV8106-Q1 provide an array of protection features to ensure robust system operation. These include under and overvoltage monitors for the power supply and charge pump, VDS overcurrent and VGS gate fault monitors for the external MOSFETs, offline open load and short circuit diagnostics, and internal thermal warning and shutdown protection.

TITexas Instruments

德州儀器美國德州儀器公司

DRV8106-Q1

DRV8106-Q1 Automotive Half-Bridge Smart Gate Driver With Wide Common Mode Inline Current Sense Amplifier

TI1Texas Instruments

德州儀器美國德州儀器公司

技術(shù)參數(shù)

  • Vs (Min) (V):

    4.5

  • Vs ABS (Max) (V):

    40

  • Sleep current (uA):

    2.5

  • Control mode:

    PWM

  • Control interface:

    Hardware (GPIO)

  • Features:

    Inline Current Sense Amplifier

  • Rating:

    Automotive

  • Operating temperature range (C):

    -40 to 125

供應(yīng)商型號品牌批號封裝庫存備注價格
TI德州儀器
22+
24000
原裝正品現(xiàn)貨,實單可談,量大價優(yōu)
詢價
TI(德州儀器)
2021+
VQFN-32
499
詢價
TI
25+
VQFN (RHB)
6000
原廠原裝,價格優(yōu)勢
詢價
TI
21+
VQFN32
2000
進口原裝現(xiàn)貨假一賠萬力挺實單
詢價
TI/德州儀器
24+
VQFN32
6000
只做原裝 有單就出
詢價
TI/德州儀器
22+
VQFN32
3500
原裝正品
詢價
TI(德州儀器)
24+
QFN32EP(5x5)
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費送樣,原廠技術(shù)支持!!!
詢價
TI(德州儀器)
24+
NA/
8735
原廠直銷,現(xiàn)貨供應(yīng),賬期支持!
詢價
TI
24+
VQFN32
9000
只做原裝正品 有掛有貨 假一賠十
詢價
TI/德州儀器
24+
VQFN-32
9000
原裝現(xiàn)貨
詢價
更多DRV8106-Q1供應(yīng)商 更新時間2025-7-28 15:01:00