DRV3245AEPHPRQ1集成電路（IC）的電機(jī)驅(qū)動(dòng)器控制器規(guī)格書(shū)PDF中文資料

DRV3245AEPHPRQ1屬于集成電路（IC）的電機(jī)驅(qū)動(dòng)器控制器。由美國(guó)德州儀器公司制造生產(chǎn)的DRV3245AEPHPRQ1電機(jī)驅(qū)動(dòng)器，控制器產(chǎn)品屬于電機(jī)驅(qū)動(dòng)器和控制器電源管理集成電路 (PMIC) 系列，可用于控制或操作從某電源施加到電機(jī)或相關(guān)機(jī)電執(zhí)行器的電源。所實(shí)現(xiàn)的具體功能和特性集根據(jù)預(yù)期負(fù)載和預(yù)期應(yīng)用的特性有很大差異，范圍從用于有刷電機(jī)的簡(jiǎn)單開(kāi)環(huán)速度控制到基于步進(jìn)電機(jī)的高級(jí)閉環(huán)運(yùn)動(dòng)控制。

1 Features

1? AEC-Q100 qualified for automotive applications:

– Device temperature grade 0:

–40°C to +150°C, TA

? SafeTI?semiconductor component

– Developed according to the applicable

requirements of ISO 26262

? 4.5-V to 45-V operating voltage

? Programmable peak gate drive currents up to 1A

? Charge-pump gate driver for 100% Duty Cycle

? Current-shunt amplifiers and phase comparators

– A Device: 3 current-shunt amplifiers and 3-

phase comparators with status through SPI

– B Device: 2 current-shunt amplifiers and 3-

phase comparators with real-time monitor

through digital pins

? 3-PWM or 6-PWM input control up to 20 kHz

? Single PWM-mode commutation capability

? Supports both 3.3-V and 5-V digital interface

? Serial peripheral interface (SPI)

? Thermally-enhanced 48-Pin HTQFP

? Protection features:

– Internal regulators, battery voltage monitor

– SPI CRC

– Clock monitor

– Analog built-in self test

– Programmable dead-time control

– MOSFET shoot-through prevention

– MOSFET VDS overcurrent monitors

– Gate-source voltage real time monitor

– Overtemperature warning

2 Applications

? High temperature 12-V automotive applications

– Automated manual transmission and dual

clutch transmission

– Shift by wire

– Transfer case and pumps

3 Description

The DRV3245E-Q1 device is a FET gate driver IC for

three-phase motor-drive applications. The device is

intended for high-temperature automotive applications

and is designed according to the applicable

requirements of ISO 26262 for functional safety

applications. The device provides three half-bridge

drivers each capable of driving a high-side and lowside

N-channel MOSFET while also providing

sophisticated protection and monitoring of the FETs.

A charge-pump driver enables 100% duty cycle and

supports low battery voltages during cold-crank

operation. The integration of current-sense amplifiers,

integrated phase comparators, and SPI-based

configuration enable reduction of the bill of materials

(BOM) and space on the printed circuit board (PCB)

because of the elimination of most external and

passive components.

The DRV3245E-Q1 device also integrates

diagnostics and protection for each internal block and

provides support for common system diagnostic

checks each of which can be instantiated and

reported through SPI. This flexibility of the integrated

features allows the device to integrate seamlessly

into a variety of safety architectures.