DE275-501N16中文資料IXYS數(shù)據(jù)手冊PDF規(guī)格書

VDSS = 500 V

ID25 = 16 A

RDS(on) = .5 ?

PDHS = 375 W

N-Channel Enhancement Mode

Avalanche Rated

Low Q

g and Rg

High dv/dt

Nanosecond Switching

Features

? Isolated Substrate

? high isolation voltage (>2500V)

? excellent thermal transfer

? Increased temperature and power cycling capability

? IXYS advanced low Qg process

? Low gate charge and capacitances

? easier to drive

? faster switching

? Low RDS(on)

? Very low insertion inductance (<2nH)

? No beryllium oxide (BeO) or other hazardous materials

Advantages

? Optimized for RF and high speed switching at frequencies to 100MHz

? Easy to mountóno insulators needed

? High power density