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DAM25N60B

N-Channel Enhancement Mode MOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

DAM25N60D

N-ChannelEnhancementModeMOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

FCH25N60N

N-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCH25N60N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=25A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=126mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FCH25N60N

MOSFET–N-Channel,SUPREMOS600V,25A,126m

Description TheSUPREMOS?MOSFETisONSemiconductor’snext generationofhighvoltagesuper?junction(SJ)technologyemploying adeeptrenchfillingprocessthatdifferentiatesitfromthe conventionalSJMOSFETs.Thisadvancedtechnologyandprecise processcontrolprovideslowestRspon?re

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FCI25N60N

N-ChannelSupreMOS?MOSFET600V,25A,125m廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCP25N60N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=25A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.125Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FCP25N60N

N-ChannelSupreMOS?MOSFET600V,25A,125m廓

DIODES

Diodes Incorporated

MTY25N60E

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTY25N60E

TMOSPOWERFET25AMPERES600VOLTSRDS(on)=0.21OHM

TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain–to–sourcediodewithfastrecoverytime.Designedforhi

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

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HITACHI
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更多DAM25N60B供應(yīng)商 更新時(shí)間2025-2-28 11:04:00

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