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FIR2N80BPG

800VN-ChannelMOSFET-T

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導體深圳市福斯特半導體有限公司

FIR2N80FG

800VN-ChannelMOSFET-T

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導體深圳市福斯特半導體有限公司

FIR2N80LG

800VN-ChannelMOSFET-T

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導體深圳市福斯特半導體有限公司

FKPF2N80

ApplicationExplanation(Switchingmodepowersupply,lightdimmer,electricflasherunit,hairdrier)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQB2N80

800VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQD2N80

800VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQD2N80

N-ChannelQFETMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQD2N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1.8A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQD2N80D

iscN-ChannelMOSFETTransistor

·FEATURES ·Drain-sourceon-resistance: RDS(on)≤6.3Ω@10V ·FastSwitchingSpeed ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ·DESCRITION ·HighfastswitchingPowerSupply

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQD2N80I

iscN-ChannelMOSFETTransistor

·FEATURES ·Drain-sourceon-resistance: RDS(on)≤6.3Ω@10V ·FastSwitchingSpeed ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ·DESCRITION ·HighfastswitchingPowerSupply

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

供應商型號品牌批號封裝庫存備注價格
N
23+
TO-252
10000
公司只做原裝正品
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N
22+
TO-252
6000
十年配單,只做原裝
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N
23+
TO-252
8400
專注配單,只做原裝進口現(xiàn)貨
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N
23+
TO-252
8400
專注配單,只做原裝進口現(xiàn)貨
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N
24+
TO-252
35400
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證
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ST
23+
TO-89
38000
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ST
22+
TO-252
16900
支持樣品 原裝現(xiàn)貨 提供技術支持!
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ST
12+
TO-252
15000
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ST
23+
SOT-252
6000
專業(yè)優(yōu)勢供應
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ST
2018+
TO252
6528
只做原裝正品假一賠十!只要網上有上百分百有庫存放心
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更多D2N80HA供應商 更新時間2025-1-23 14:30:00

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