D2065C5中文資料英飛凌數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

1 Description

ThinQ!? Generation 5 represents Infineon leading edge technology for the SiC

Schottky Barrier diodes. Thanks to the more compact design and thin-wafer

technology, the new family of products shows improved efficiency over all load

conditions, resulting from both the improved thermal characteristics and a lower

figure of merit (Qc x Vf).

The new thinQ!? Generation 5 has been designed to complement our 650V

CoolMOS? families: this ensures meeting the most stringent application

requirements in this voltage range.

Features

? Revolutionary semiconductor material - Silicon Carbide

? Benchmark switching behavior

? No reverse recovery/ No forward recovery

? Temperature independent switching behavior

? High surge current capability

? Pb-free lead plating; RoHS compliant

? Qualified according to JEDEC1) for target applications

? Breakdown voltage tested at 44 mA2)

? Optimized for high temperature operation

Benefits

? System efficiency improvement over Si diodes

? System cost / size savings due to reduced cooling requirements

? Enabling higher frequency / increased power density solutions

? Higher system reliability due to lower operating temperatures

? Reduced EMI