CY7C1354B集成電路（IC）的存儲器規(guī)格書PDF中文資料

Functional Description

The CY7C1354B and CY7C1356B are 3.3V, 256K x 36 and 512K x 18 Synchronous pipelined burst SRAMs with No Bus Latency? (NoBL?) logic, respectively. They are designed to support unlimited true back-to-back Read/Write operations with no wait states. The CY7C1354B and CY7C1356B are equipped with the advanced (NoBL) logic required to enable consecutive Read/Write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of data in systems that require frequent Write/Read transitions. The CY7C1354B and CY7C1356B are pin compatible and functionally equivalent to ZBT devices.

Features

? Pin-compatible and functionally equivalent to ZBT

? Supports 225-MHz bus operations with zero wait states

— Available speed grades are 225, 200, and 166 MHz

? Internally self-timed output buffer control to eliminate the need to use asynchronous OE

? Fully registered (inputs and outputs) for pipelined operation

? Byte Write capability

? Separate VDDQ for 3.3V or 2.5V I/O

? Single 3.3V power supply

? Fast clock-to-output times

— 2.8 ns (for 225-MHz device)

— 3.2ns (for 200-MHz device)

— 3.5 ns (for 166-MHz device)

? Clock Enable (CEN) pin to suspend operation

? Synchronous self-timed writes

? Available in 100 TQFP, 119 BGA, and 165 fBGA packages

? IEEE 1149.1 JTAG Boundary Scan

? Burst capability–linear or interleaved burst order

? “ZZ” Sleep Mode option and Stop Clock option