首頁 >CWL1330C>規(guī)格書列表
| 零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
DOLBYB/CTYPENOISEREDUCTIONSYSTEM Description TheCXA1330/CXA1331/CXA1332arebipolarICsprovidingtwoseparateDolbyB/Ctypenoisereductionprocessors.TheseriesiscomposedoffivedeviceshavingthreeDolbylevelsandtwotypesofpackageforvariousapplications. | SonySony Semiconductor Solutions Group 索尼 | Sony | ||
DOLBYB/CTYPENOISEREDUCTIONSYSTEM Description TheCXA1330/CXA1331/CXA1332arebipolarICsprovidingtwoseparateDolbyB/Ctypenoisereductionprocessors.TheseriesiscomposedoffivedeviceshavingthreeDolbylevelsandtwotypesofpackageforvariousapplications. | SonySony Semiconductor Solutions Group 索尼 | Sony | ||
SurfaceMountZenerDiode Features Idealforsurfacemountapplications Easypickandplace 5&10voltagetolerancesavailable Widevoltagerange MeetsULspecification94V-0 | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SMDZenerDiode Features -Glasspassivatedchip. -Lowleakage. -Foruseinstabilizingandclippingwithhighpowerrating. -Built-instrainrelief. -Lowinductance. -Highpeakreversepowerdissipation. Mechanicaldata -Case:JEDECDO-214AC,moldedplastic. -Epoxy:UL94V-0rateflameretardant. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SMDZenerDiode Features -Glasspassivatedchip. -Lowleakage. -Foruseinstabilizingandclippingwithhighpowerrating. -Built-instrainrelief. -Lowinductance. -Highpeakreversepowerdissipation. Mechanicaldata -Case:JEDECDO-214AC,moldedplastic. -Epoxy:UL94V-0rateflameretardant. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SMDZenerDiode Features -Glasspassivatedchip. -Lowleakage. -Foruseinstabilizingandclippingwithhighpowerrating. -Built-instrainrelief. -Lowinductance. -Highpeakreversepowerdissipation. Mechanicaldata -Case:JEDECDO-214AC,moldedplastic. -Epoxy:UL94V-0rateflameretardant. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SiliconNPNepitaxialplanertype(Forlow-voltageoutputamplification) SiliconNPNepitaxialplanertype Forlow-voltageoutputamplification Formuting ForDC-DCconverter ■Features ●LowcollectortoemittersaturationvoltageVCE(sat). ●LowONresistanceRon. ●HighfowardcurrenttransferratiohFE. ●Mtypepackageallowingeasyautomaticandmanualin | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
10Watt,3.3VOutputDC-DCConverters | INTRONICS Intronics Power, Inc. | INTRONICS | ||
256kNonvolatileSRAMwithBatteryMonitor | DallasDallas Semiconductor 亞德諾亞德諾半導(dǎo)體 | Dallas | ||
256kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS1330256kNVSRAMsare262,144-bit,fullystatic,NVSRAMsorganizedas32,768wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,thelithiu | DallasDallas Semiconductor 亞德諾亞德諾半導(dǎo)體 | Dallas |
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