首頁 >CSE3N100P>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-ChannelEnhancementModeMOSFET | DACO DACO SEMICONDUCTOR CO.,LTD. | DACO | ||
N-ChannelEnhancementModePowerMOSFET | IXYS IXYS Corporation | IXYS | ||
PolarVHVTMPowerMOSFETN-ChannelEnhancementMode | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3.0A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andAC-DCmotorcontrols | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PolarVHVTMPowerMOSFETN-ChannelEnhancementMode | IXYS IXYS Corporation | IXYS | ||
N-ChannelEnhancementModePowerMOSFET | IXYS IXYS Corporation | IXYS | ||
N-ChannelEnhancementModePowerMOSFET | IXYS IXYS Corporation | IXYS | ||
PolarVHVTMPowerMOSFETN-ChannelEnhancementMode | IXYS IXYS Corporation | IXYS | ||
TMOSPOWERFET3.0AMPERES1000VOLTS TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithhigherpowerandlowerRDS(on)capabilities.ThishighvoltageMOSFETusesanadvancedterminations | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
HighEnergyPowerFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
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