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HAF1009

SiliconPChannelMOSFETSeriesPowerSwitching

Description ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HAF1009L

SiliconPChannelMOSFETSeriesPowerSwitching

Description ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HAF1009S

SiliconPChannelMOSFETSeriesPowerSwitching

Description ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HPR1009

1.0WATTUNREGULATEDSIPDC/DCCONVERTER

DESCRIPTION TheHPR10XXSeriesusesadvancedcircuitdesignandpackagingtechnologytodeliversuperiorreliabilityandperformance.A170kHzpush-pulloscillatorisusedintheinputstage.Beat-frequencyoscillationproblemsarereducedwhenusingtheHPR10XXSerieswithhighfrequencyisola

CANDD

C&D Technologies

HPR1009

1.0WATTUNREGULATEDSIPDC/DCCONVERTER

DESCRIPTION TheHPR10XXSeriesusesadvancedcircuitdesignandpackagingtechnologytodeliversuperiorreliabilityandperformance.A170kHzpush-pulloscillatorisusedintheinputstage.Beat-frequencyoscillationproblemsarereducedwhenusingtheHPR10XXSerieswithhighfrequencyisola

CANDD

C&D Technologies

HPR1009C

1.0WATTUNREGULATED,SIPDC/DCCONVERTER

DESCRIPTION TheHPR10XXCSeriesusesadvancedcircuitdesignandpackagingtechnologytodeliversuperiorreliabilityandperformance.A170kHzpush-pulloscillatorisusedintheinputstage.Beat-frequencyoscillationproblemsarereducedwhenusingtheHPR10XXCSerieswithhighfrequencyiso

MURATA-PSMurata Power Solutions Inc.

村田村田制作所

IPT-1009

ICReferenceDesignTransformers

ICE

ice Components, Ins.

IS-1009EH

RadiationHardened2.5VReference

Features ?ElectricallyscreenedtoSMD#5962-00523 ?QMLqualifiedperMIL-PRF-38535requirements ?EHversionacceptancetestedto50krad(Si)(LDR) ?Radiationenvironment-IS-1009EH -Highdoserate(50-300rad(Si)/s)...........300krad(Si) -Lowdoserate(0.01rad(Si)/s)...

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IS-1009RH

RadiationHardened2.5VReference

Intersil

Intersil Corporation

IS-1009RH

RadiationHardened2.5VReference

Intersil

Intersil Corporation

詳細(xì)參數(shù)

  • 型號(hào):

    CSC1009R

  • 功能描述:

    TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 700MA I(C) | TO-92

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
SMK
23+
357355
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EATON
20+
連接器
493
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Eaton
22+
NA
168
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YD
2023+
8700
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一級(jí)代理
23+
N/A
8000
只做原裝現(xiàn)貨
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一級(jí)代理
23+
N/A
7000
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N/A
24+
DIP
3500
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CSC
24+
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2987
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CAT
23+
DIP
1050
正品原裝貨價(jià)格低
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N/A
2023+
DIP
50000
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更多CSC1009R供應(yīng)商 更新時(shí)間2025-5-24 15:23:00